SMIRF5N65T9TL Datasheet. Specs and Replacement
Type Designator: SMIRF5N65T9TL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ -
Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO252
SMIRF5N65T9TL substitution
- MOSFET ⓘ Cross-Reference Search
SMIRF5N65T9TL datasheet
5.1. Size:1326K cn sps
smirf5n65.pdf 
SMIRF5N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 5A SMIRF5N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 2.3 (VGS=10V, ID=2.5A) on-state resistance, provide superior ... See More ⇒
9.1. Size:1604K cn sps
smirf16n65.pdf
SMIRF16N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6 (VGS=10V, ID=8A) on-state resistance, provide superior ... See More ⇒
9.2. Size:1313K cn sps
smirf12n65.pdf
SMIRF12N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75 (VGS=10V, ID=6A) on-state resistance, provide superior... See More ⇒
9.3. Size:1247K cn sps
smirf8n60.pdf
SMIRF8N60 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 8A SMIRF8N60 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 600V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson(max) 1.2 (VGS=10V, ID=4A) on-state resistance, provide superior switchi... See More ⇒
9.4. Size:1229K cn sps
smirf7n65.pdf
SMIRF7N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 7A SMIRF7N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 1.3 (VGS=10V, ID=3.5A) on-state resistance, provide superior s... See More ⇒
9.5. Size:1202K cn sps
smirf10n65.pdf
SMIRF10N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 10A SMIRF10N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 1.0 (VGS=10V, ID=5A) on-state resistance, provide superior ... See More ⇒
9.6. Size:1649K cn sps
smirf20n65.pdf
SMIRF20N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 20A IRF20N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.5 (VGS=10V, ID=10A) on-state resistance, provide superior s... See More ⇒
9.7. Size:1406K cn sps
smirf8n65.pdf
SMIRF8N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 8A SMIRF8N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson(max) 1.2 (VGS=10V, ID=4A) on-state resistance, provide superior switchi... See More ⇒
9.8. Size:753K cn sps
smirf4n65.pdf
SMIRF4N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 4A SMIRF4N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 2.8 (VGS=10V, ID=2A) on-state resistance, provide superior swi... See More ⇒
9.9. Size:1558K cn sps
smirf18n50.pdf
SMIRF18N50 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 18A SMIRF18N50 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 500V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.35 (VGS=10V, ID=9A) on-state resistance, provide superior... See More ⇒
9.10. Size:1322K cn sps
smirf13n50.pdf
SMIRF13N50 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 13A SMIRF13N50 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 500V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.48 (VGS=10V, ID=6.5A) on-state resistance, provide superi... See More ⇒
Detailed specifications: SMIRF20N65T8TL, SMIRF4N65T1TL, SMIRF4N65T2TL, SMIRF4N65TBRL, SMIRF4N65T9RL, SMIRF5N65T1TL, SMIRF5N65T2TL, SMIRF5N65TBRL, IRF740, SMIRF7N65T1TL, SMIRF7N65T2TL, SMIRF7N65T9RL, SMIRF8N60T1TL, SMIRF8N60T2TL, SMIRF8N65T1TL, SMIRF8N65T2TL, 2SK2941
Keywords - SMIRF5N65T9TL MOSFET specs
SMIRF5N65T9TL cross reference
SMIRF5N65T9TL equivalent finder
SMIRF5N65T9TL pdf lookup
SMIRF5N65T9TL substitution
SMIRF5N65T9TL replacement
Can't find your MOSFET?
Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
