All MOSFET. SMIRF7N65T1TL Datasheet

 

SMIRF7N65T1TL Datasheet and Replacement


   Type Designator: SMIRF7N65T1TL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 145 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO220
 

 SMIRF7N65T1TL substitution

   - MOSFET ⓘ Cross-Reference Search

 

SMIRF7N65T1TL Datasheet (PDF)

 5.1. Size:1229K  cn sps
 smirf7n65.pdf pdf_icon

SMIRF7N65T1TL

SMIRF7N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 7A SMIRF7N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 1.3(VGS=10V, ID=3.5A) on-state resistance, provide superior s

 9.1. Size:1604K  cn sps
 smirf16n65.pdf pdf_icon

SMIRF7N65T1TL

SMIRF16N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6(VGS=10V, ID=8A) on-state resistance, provide superior

 9.2. Size:1313K  cn sps
 smirf12n65.pdf pdf_icon

SMIRF7N65T1TL

SMIRF12N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75(VGS=10V, ID=6A) on-state resistance, provide superior

 9.3. Size:1247K  cn sps
 smirf8n60.pdf pdf_icon

SMIRF7N65T1TL

SMIRF8N6030V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 8A SMIRF8N60 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 600V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson(max) 1.2(VGS=10V, ID=4A) on-state resistance, provide superior switchi

SHOW MORE

Datasheet: SMIRF4N65T1TL , SMIRF4N65T2TL , SMIRF4N65TBRL , SMIRF4N65T9RL , SMIRF5N65T1TL , SMIRF5N65T2TL , SMIRF5N65TBRL , SMIRF5N65T9TL , 20N60 , SMIRF7N65T2TL , SMIRF7N65T9RL , SMIRF8N60T1TL , SMIRF8N60T2TL , SMIRF8N65T1TL , SMIRF8N65T2TL , 2SK2941 , 2SK2949L .

History: PDM6T20V3 | PSMN6R3-120PS | HU70N08 | ST2300SRG | TPCS8102 | SVF10N60S | AOWF11N60

Keywords - SMIRF7N65T1TL MOSFET datasheet

 SMIRF7N65T1TL cross reference
 SMIRF7N65T1TL equivalent finder
 SMIRF7N65T1TL lookup
 SMIRF7N65T1TL substitution
 SMIRF7N65T1TL replacement

 

 
Back to Top

 


 
.