All MOSFET. FCH76N60N Datasheet

 

FCH76N60N Datasheet and Replacement


   Type Designator: FCH76N60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 543 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 76 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO247 TO3P TO3PF
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FCH76N60N Datasheet (PDF)

 ..1. Size:736K  fairchild semi
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FCH76N60N

May 2010SupreMOSTMFCH76N60NN-Channel MOSFET 600V, 76A, 36mFeatures Description RDS(on) = 28m ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 218nC)process that differentiates it from preceding multi-epi based technologies. By utili

 0.1. Size:547K  fairchild semi
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FCH76N60N

January 2011SupreMOSFCH76N60NFtm600V N-Channel MOSFET, FRFET Features Description RDS(on) = 28.7m ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 230nC)process that differentiates it from preceding multi-epi based technologies. By

 0.2. Size:678K  onsemi
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FCH76N60N

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SSP10N60A | HLML6401 | CJ3401 | DMNH6042SK3 | DMP3050LSS | YJL2305B | AP85T03GH-HF

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