All MOSFET. FCH76N60N Datasheet

 

FCH76N60N MOSFET. Datasheet pdf. Equivalent

Type Designator: FCH76N60N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 543 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 76 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.036 Ohm

Package: TO247_TO3P_TO3PF

FCH76N60N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCH76N60N Datasheet (PDF)

1.1. fch76n60nf.pdf Size:547K _fairchild_semi

FCH76N60N
FCH76N60N

January 2011 SupreMOS® FCH76N60NF tm 600V N-Channel MOSFET, FRFET Features Description • RDS(on) = 28.7m? ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra Low Gate Charge ( Typ.Qg = 230nC) process that differentiates it from preceding multi-epi based technologies. By utilizing t

1.2. fch76n60n.pdf Size:736K _fairchild_semi

FCH76N60N
FCH76N60N

May 2010 SupreMOSTM FCH76N60N N-Channel MOSFET 600V, 76A, 36m? Features Description • RDS(on) = 28m? ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra Low Gate Charge ( Typ.Qg = 218nC) process that differentiates it from preceding multi-epi based technologies. By utilizing this a

 

Datasheet: FCH47N60 , STU664S , FCH47N60F , STU660 , FCH47N60N , STU650S , FCH47N60NF , STU630S , J111 , STU624S , FCH76N60NF , STU622S , FCI25N60N_F102 , STU618S , FCI7N60 , STU616S , FCP11N60F .

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