All MOSFET. 2SK3009 Datasheet

 

2SK3009 Datasheet and Replacement


   Type Designator: 2SK3009
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   ton ⓘ - Turn-on Time: 55 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220
 

 2SK3009 substitution

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2SK3009 Datasheet (PDF)

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2SK3009

 0.1. Size:279K  inchange semiconductor
 2sk3009ls.pdf pdf_icon

2SK3009

isc N-Channel MOSFET Transistor 2SK3009LSFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 0.2. Size:357K  inchange semiconductor
 2sk3009b.pdf pdf_icon

2SK3009

isc N-Channel MOSFET Transistor 2SK3009BFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 0.3. Size:289K  inchange semiconductor
 2sk3009p.pdf pdf_icon

2SK3009

isc N-Channel MOSFET Transistor 2SK3009PFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

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History: IRFBC40LC

Keywords - 2SK3009 MOSFET datasheet

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