2SK3352 Datasheet PDF and Equivalents Search

 ..1. Size:38K  1
 2sk3352.pdf

Ordering number ENN8125 2SK3352 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3352 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. DC / DC converter applications. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ... See More ⇒

 0.1. Size:356K  inchange semiconductor
 2sk3352b.pdf

isc P-Channel MOSFET Transistor 2SK3352B FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 15m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒

 0.2. Size:340K  inchange semiconductor
 2sk3352k.pdf

isc P-Channel MOSFET Transistor 2SK3352K FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 15m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒

 8.1. Size:214K  renesas
 2sk3355.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.2. Size:214K  renesas
 2sk3355-s-z-zj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.3. Size:260K  renesas
 2sk3357.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.4. Size:214K  renesas
 2sk3354-s-z-zj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.5. Size:42K  nec
 2sk3354.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3354 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3354 TO-220AB 2SK3354-S TO-262 FEATURES 2SK3354-Z TO-220SMD Super low on-state resistance RDS(on)1 = 8.0 m MAX. (VGS =... See More ⇒

 8.6. Size:39K  nec
 2sk3353-s-z.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3353 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3353 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3353 TO-220AB 2SK3353-S TO-262 FEATURES 2SK3353-Z TO-220SMD Super low on-state resistance RDS(on)1 = 9.5 m MAX. (VGS ... See More ⇒

 8.7. Size:289K  inchange semiconductor
 2sk3355.pdf

isc N-Channel MOSFET Transistor 2SK3355 FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 8.8. Size:357K  inchange semiconductor
 2sk3353-z.pdf

isc N-Channel MOSFET Transistor 2SK3353-Z FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 8.9. Size:357K  inchange semiconductor
 2sk3354-z.pdf

isc N-Channel MOSFET Transistor 2SK3354-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒

 8.10. Size:283K  inchange semiconductor
 2sk3355-s.pdf

isc N-Channel MOSFET Transistor 2SK3355-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 8.11. Size:357K  inchange semiconductor
 2sk3355-zj.pdf

isc N-Channel MOSFET Transistor 2SK3355-ZJ FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 8.12. Size:289K  inchange semiconductor
 2sk3354.pdf

isc N-Channel MOSFET Transistor 2SK3354 FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 8.0m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 8.13. Size:287K  inchange semiconductor
 2sk3357.pdf

isc N-Channel MOSFET Transistor 2SK3357 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 8.14. Size:283K  inchange semiconductor
 2sk3353-s.pdf

isc N-Channel MOSFET Transistor 2SK3353-S FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 8.15. Size:283K  inchange semiconductor
 2sk3354-s.pdf

isc N-Channel MOSFET Transistor 2SK3354-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒

 8.16. Size:357K  inchange semiconductor
 2sk3355-z.pdf

isc N-Channel MOSFET Transistor 2SK3355-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 8.17. Size:289K  inchange semiconductor
 2sk3353.pdf

isc N-Channel MOSFET Transistor 2SK3353 FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒