All MOSFET. 2SK3834 Datasheet

 

2SK3834 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK3834
   Marking Code: K3834
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 117 nC
   trⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TO3PB

 2SK3834 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3834 Datasheet (PDF)

 ..1. Size:38K  1
2sk3834.pdf

2SK3834
2SK3834

Ordering number : ENN8017 2SK3834N-Channel Silicon MOSFET2SK3834 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 ..2. Size:272K  inchange semiconductor
2sk3834.pdf

2SK3834
2SK3834

isc N-Channel MOSFET Transistor 2SK3834FEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 26m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.1. Size:40K  1
2sk3831.pdf

2SK3834
2SK3834

Ordering number : ENN8028 2SK3831N-Channel Silicon MOSFET2SK3831 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 8.2. Size:37K  sanyo
2sk3836.pdf

2SK3834
2SK3834

Ordering number : EN8638 2SK3836N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3836ApplicationsFeatures Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 100 VGate-to-Source Voltage VGSS 20 VDrain Current (DC)

 8.3. Size:40K  sanyo
2sk3833.pdf

2SK3834
2SK3834

Ordering number : ENN8016 2SK3833N-Channel Silicon MOSFET2SK3833 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 8.4. Size:39K  sanyo
2sk3832.pdf

2SK3834
2SK3834

Ordering number : ENN8015 2SK3832N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3832ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 8.5. Size:39K  sanyo
2sk3830.pdf

2SK3834
2SK3834

Ordering number : ENN8032 2SK3830N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3830ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS

 8.6. Size:37K  sanyo
2sk3835.pdf

2SK3834
2SK3834

Ordering number : EN8637 2SK3835N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3835ApplicationsFeatures Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC)

 8.7. Size:274K  inchange semiconductor
2sk3836.pdf

2SK3834
2SK3834

isc N-Channel MOSFET Transistor 2SK3836FEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 34m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.8. Size:273K  inchange semiconductor
2sk3833.pdf

2SK3834
2SK3834

isc N-Channel MOSFET Transistor 2SK3833FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 34m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.9. Size:273K  inchange semiconductor
2sk3831.pdf

2SK3834
2SK3834

isc N-Channel MOSFET Transistor 2SK3831FEATURESDrain Current : I = 85A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

 8.10. Size:273K  inchange semiconductor
2sk3832.pdf

2SK3834
2SK3834

isc N-Channel MOSFET Transistor 2SK3832FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.11. Size:273K  inchange semiconductor
2sk3830.pdf

2SK3834
2SK3834

isc N-Channel MOSFET Transistor 2SK3830FEATURESDrain Current : I = 72A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 16m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

 8.12. Size:273K  inchange semiconductor
2sk3835.pdf

2SK3834
2SK3834

isc N-Channel MOSFET Transistor 2SK3835FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 15m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SFP9614

 

 
Back to Top