All MOSFET. 2SK3337N Datasheet

 

2SK3337N MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK3337N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 255 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO3PN

 2SK3337N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3337N Datasheet (PDF)

 ..1. Size:286K  inchange semiconductor
2sk3337n.pdf

2SK3337N
2SK3337N

isc N-Channel MOSFET Transistor 2SK3337NFEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 7.1. Size:411K  1
2sk3337-01.pdf

2SK3337N
2SK3337N

FUJI POWER MOS-FET2SK3337-01N-CHANNEL SILICON POWER MOS-FET11.60.2 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving powerAvalanche-proof Applications Switching regulatorsUPS (Uninterruptible Power Supply) DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=25C unless otherwise

 7.2. Size:331K  inchange semiconductor
2sk3337w.pdf

2SK3337N
2SK3337N

isc N-Channel MOSFET Transistor 2SK3337WFEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.1. Size:396K  1
2sk3339-01.pdf

2SK3337N
2SK3337N

FUJI POWER MOS-FET2SK3339-01N-CHANNEL SILICON POWER MOS-FET11.60.2 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving powerAvalanche-proof Applications Switching regulatorsUPS (Uninterruptible Power Supply) DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)Item Symbol Ratin

 8.2. Size:32K  sanyo
2sk3335.pdf

2SK3337N
2SK3337N

Ordering number : ENN72162SK3335N-Channel Silicon MOSFET2SK3335Ultrahigh-Speed Switching ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm 4V drive.2083B[2SK3335]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TPunit : mm2092B[2SK3335]6.5 2.35.0 0.540.50.851 2 3

 8.3. Size:292K  panasonic
2sk3333.pdf

2SK3337N
2SK3337N

MOS FET()2SK3333NMOSUnit : mm6.9 0.1 2.5 0.10.7 4.0 0.8 0.65 max. 0.45+0.10- 0.050.45+0.10- 0.051.05 0.052.5 0

 8.4. Size:30K  fuji
2sk3338-01.pdf

2SK3337N

FUJI POWER MOS-FET2SK3338-01N-CHANNEL SILICON POWER MOS-FET FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators UPS (Uninterruptible Power Supply) DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)Item Symbol Rating UnitEq

 8.5. Size:286K  inchange semiconductor
2sk3339n.pdf

2SK3337N
2SK3337N

isc N-Channel MOSFET Transistor 2SK3339NFEATURESDrain Current : I = 27A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.6. Size:330K  inchange semiconductor
2sk3339w.pdf

2SK3337N
2SK3337N

isc N-Channel MOSFET Transistor 2SK3339WFEATURESDrain Current : I = 27A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.7. Size:331K  inchange semiconductor
2sk3338w.pdf

2SK3337N
2SK3337N

isc N-Channel MOSFET Transistor 2SK3338WFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.27(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 8.8. Size:286K  inchange semiconductor
2sk3338n.pdf

2SK3337N
2SK3337N

isc N-Channel MOSFET Transistor 2SK3338NFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.27(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: NCE6005AR

 

 
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