2SK3337-01 Datasheet PDF and Equivalents Search

 ..1. Size:411K  1
 2sk3337-01.pdf

FUJI POWER MOS-FET 2SK3337-01 N-CHANNEL SILICON POWER MOS-FET 11.6 0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25 C unless otherwise... See More ⇒

 7.1. Size:331K  inchange semiconductor
 2sk3337w.pdf

isc N-Channel MOSFET Transistor 2SK3337W FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 2 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 7.2. Size:286K  inchange semiconductor
 2sk3337n.pdf

isc N-Channel MOSFET Transistor 2SK3337N FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 2 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 8.1. Size:396K  1
 2sk3339-01.pdf

FUJI POWER MOS-FET 2SK3339-01 N-CHANNEL SILICON POWER MOS-FET 11.6 0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwise specified) Item Symbol Ratin... See More ⇒

 8.2. Size:32K  sanyo
 2sk3335.pdf

Ordering number ENN7216 2SK3335 N-Channel Silicon MOSFET 2SK3335 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm 4V drive. 2083B [2SK3335] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SK3335] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 ... See More ⇒

 8.3. Size:292K  panasonic
 2sk3333.pdf

MOS FET( ) 2SK3333 N MOS Unit mm 6.9 0.1 2.5 0.1 0.7 4.0 0.8 0.65 max. 0.45+0.10 - 0.05 0.45+0.10 - 0.05 1.05 0.05 2.5 0... See More ⇒

 8.4. Size:30K  fuji
 2sk3338-01.pdf

FUJI POWER MOS-FET 2SK3338-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwise specified) Item Symbol Rating Unit Eq... See More ⇒

 8.5. Size:286K  inchange semiconductor
 2sk3339n.pdf

isc N-Channel MOSFET Transistor 2SK3339N FEATURES Drain Current I = 27A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.2 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

 8.6. Size:330K  inchange semiconductor
 2sk3339w.pdf

isc N-Channel MOSFET Transistor 2SK3339W FEATURES Drain Current I = 27A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.2 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

 8.7. Size:331K  inchange semiconductor
 2sk3338w.pdf

isc N-Channel MOSFET Transistor 2SK3338W FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒

 8.8. Size:286K  inchange semiconductor
 2sk3338n.pdf

isc N-Channel MOSFET Transistor 2SK3338N FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒