All MOSFET. 2SK3340-01 Datasheet

 

2SK3340-01 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK3340-01
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 295 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 23 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 137 nC
   trⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO247

 2SK3340-01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3340-01 Datasheet (PDF)

 ..1. Size:405K  1
 2sk3340-01.pdf

2SK3340-01 2SK3340-01

FUJI POWER MOS-FET2SK3340-01N-CHANNEL SILICON POWER MOS-FET11.60.2 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving powerAvalanche-proof Applications Switching regulatorsUPS (Uninterruptible Power Supply) DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)Item Symbol Ratin

 7.1. Size:286K  inchange semiconductor
 2sk3340n.pdf

2SK3340-01 2SK3340-01

isc N-Channel MOSFET Transistor 2SK3340NFEATURESDrain Current : I = 23A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 7.2. Size:331K  inchange semiconductor
 2sk3340w.pdf

2SK3340-01 2SK3340-01

isc N-Channel MOSFET Transistor 2SK3340WFEATURESDrain Current : I = 23A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.1. Size:423K  1
 2sk3341-01.pdf

2SK3340-01 2SK3340-01

FUJI POWER MOS-FET2SK3341-01N-CHANNEL SILICON POWER MOS-FET11.60.2 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving powerAvalanche-proof Applications Switching regulatorsUPS (Uninterruptible Power Supply) DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)Item Symbol Ratin

 8.2. Size:125K  toshiba
 2sk3342.pdf

2SK3340-01 2SK3340-01

2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3342 Switching Regulator Applications DC-DC Converter, and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.8 (typ.) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode : Vth

 8.3. Size:330K  inchange semiconductor
 2sk3341w.pdf

2SK3340-01 2SK3340-01

isc N-Channel MOSFET Transistor 2SK3341WFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.4. Size:286K  inchange semiconductor
 2sk3341n.pdf

2SK3340-01 2SK3340-01

isc N-Channel MOSFET Transistor 2SK3341NFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FDS6682

 

 
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