All MOSFET. 2SK3341-01 Datasheet

 

2SK3341-01 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK3341-01
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 310 W
   Maximum Drain-Source Voltage |Vds|: 900 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
   Maximum Drain Current |Id|: 10 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 120 nC
   Rise Time (tr): 70 nS
   Drain-Source Capacitance (Cd): 240 pF
   Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm
   Package: TO247

 2SK3341-01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3341-01 Datasheet (PDF)

 ..1. Size:423K  1
 2sk3341-01.pdf

2SK3341-01 2SK3341-01

FUJI POWER MOS-FET2SK3341-01N-CHANNEL SILICON POWER MOS-FET11.60.2 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving powerAvalanche-proof Applications Switching regulatorsUPS (Uninterruptible Power Supply) DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)Item Symbol Ratin

 7.1. Size:330K  inchange semiconductor
 2sk3341w.pdf

2SK3341-01 2SK3341-01

isc N-Channel MOSFET Transistor 2SK3341WFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 7.2. Size:286K  inchange semiconductor
 2sk3341n.pdf

2SK3341-01 2SK3341-01

isc N-Channel MOSFET Transistor 2SK3341NFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.1. Size:405K  1
 2sk3340-01.pdf

2SK3341-01 2SK3341-01

FUJI POWER MOS-FET2SK3340-01N-CHANNEL SILICON POWER MOS-FET11.60.2 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving powerAvalanche-proof Applications Switching regulatorsUPS (Uninterruptible Power Supply) DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)Item Symbol Ratin

 8.2. Size:125K  toshiba
 2sk3342.pdf

2SK3341-01 2SK3341-01

2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3342 Switching Regulator Applications DC-DC Converter, and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.8 (typ.) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode : Vth

 8.3. Size:286K  inchange semiconductor
 2sk3340n.pdf

2SK3341-01 2SK3341-01

isc N-Channel MOSFET Transistor 2SK3340NFEATURESDrain Current : I = 23A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.4. Size:331K  inchange semiconductor
 2sk3340w.pdf

2SK3341-01 2SK3341-01

isc N-Channel MOSFET Transistor 2SK3340WFEATURESDrain Current : I = 23A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2N6788U

 

 
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