2SK3341N
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3341N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 310
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2
Ohm
Package:
TO3PN
2SK3341N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3341N
Datasheet (PDF)
..1. Size:286K inchange semiconductor
2sk3341n.pdf 
isc N-Channel MOSFET Transistor 2SK3341NFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
7.1. Size:423K 1
2sk3341-01.pdf
FUJI POWER MOS-FET2SK3341-01N-CHANNEL SILICON POWER MOS-FET11.60.2 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving powerAvalanche-proof Applications Switching regulatorsUPS (Uninterruptible Power Supply) DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)Item Symbol Ratin
7.2. Size:330K inchange semiconductor
2sk3341w.pdf
isc N-Channel MOSFET Transistor 2SK3341WFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.1. Size:405K 1
2sk3340-01.pdf
FUJI POWER MOS-FET2SK3340-01N-CHANNEL SILICON POWER MOS-FET11.60.2 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving powerAvalanche-proof Applications Switching regulatorsUPS (Uninterruptible Power Supply) DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)Item Symbol Ratin
8.2. Size:125K toshiba
2sk3342.pdf
2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3342 Switching Regulator Applications DC-DC Converter, and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.8 (typ.) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode : Vth
8.3. Size:286K inchange semiconductor
2sk3340n.pdf
isc N-Channel MOSFET Transistor 2SK3340NFEATURESDrain Current : I = 23A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.4. Size:331K inchange semiconductor
2sk3340w.pdf
isc N-Channel MOSFET Transistor 2SK3340WFEATURESDrain Current : I = 23A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
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