2SK3362 MOSFET. Datasheet pdf. Equivalent

isc N-Channel MOSFET Transistor 2SK3362FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

2SK3362-01FUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsTO-220ABHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

FUJI POWER MOS-FET2SK3363-01N-CHANNEL SILICON POWER MOS-FETTO-220AB FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators UPS (Uninterruptible Power Supply)3. Source DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=25C unles

FUJI POWER MOS-FET2SK3364-01N-CHANNEL SILICON POWER MOS-FET FeaturesTO-220ABHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters3. SourceMaximum ratings and characteristicAbsolute maximum ratingsEquivalent circuit schematic(Tc=25C unles

isc N-Channel MOSFET Transistor 2SK3364FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3366-ZFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R =21m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3367FEATURESDrain Current : I = 36A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dri

isc N-Channel MOSFET Transistor 2SK3365FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R =14m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dri

isc N-Channel MOSFET Transistor 2SK3363FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 6.8m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3366FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R =21m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dri

isc N-Channel MOSFET Transistor 2SK3367-ZFEATURESDrain Current : I = 36A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3365-ZFEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R =14m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d