2SK3513S PDF and Equivalents Search

 ..1. Size:357K  inchange semiconductor
 2sk3513s.pdf

isc N-Channel MOSFET Transistor 2SK3513S FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 7.1. Size:259K  fuji
 2sk3513-01l-s-sj.pdf

2SK3513-01L,S,SJ 200303 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl... See More ⇒

 7.2. Size:283K  inchange semiconductor
 2sk3513l.pdf

isc N-Channel MOSFET Transistor 2SK3513L FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 8.1. Size:213K  renesas
 2sk3511-s-z-zj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.2. Size:214K  renesas
 2sk3510-s-z-zj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.3. Size:104K  fuji
 2sk3517-01.pdf

FUJI POWER MOSFET200303 2SK3517-01 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles... See More ⇒

 8.4. Size:106K  fuji
 2sk3518-01mr.pdf

FUJI POWER MOSFET200303 2SK3518-01MR N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle... See More ⇒

 8.5. Size:96K  fuji
 2sk3515-01mr.pdf

FUJI POWER MOSFET200303 2SK3515-01MR N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle... See More ⇒

 8.6. Size:100K  fuji
 2sk3519-01.pdf

FUJI POWER MOSFET200303 2SK3519-01 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles... See More ⇒

 8.7. Size:93K  fuji
 2sk3514-01.pdf

FUJI POWER MOSFET200303 2SK3514-01 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles... See More ⇒

 8.8. Size:250K  fuji
 2sk3516-01l-s-sj.pdf

2SK3516-01L,S,SJ 200303 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle... See More ⇒

 8.9. Size:308K  fuji
 2sk3512-01l-s-sj.pdf

http //www.fujielectric.com/products/semiconductor/ 2SK3512-01L,S,SJ FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators P4 UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteris... See More ⇒

 8.10. Size:221K  hitachi
 2sk351.pdf

... See More ⇒

 8.11. Size:289K  inchange semiconductor
 2sk3517-01.pdf

isc N-Channel MOSFET Transistor 2SK3517-01 FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 8.12. Size:279K  inchange semiconductor
 2sk3518-01mr.pdf

isc N-Channel MOSFET Transistor 2SK3518-01MR FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V =500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 8.13. Size:357K  inchange semiconductor
 2sk3510-zj.pdf

isc N-Channel MOSFET Transistor 2SK3510-ZJ FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒

 8.14. Size:288K  inchange semiconductor
 2sk3511.pdf

isc N-Channel MOSFET Transistor 2SK3511 FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 12.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

 8.15. Size:299K  inchange semiconductor
 2sk351.pdf

isc N-Channel MOSFET Transistor 2SK351 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr... See More ⇒

 8.16. Size:279K  inchange semiconductor
 2sk3515-01mr.pdf

isc N-Channel MOSFET Transistor 2SK3515-01MR FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒

 8.17. Size:357K  inchange semiconductor
 2sk3511-z.pdf

isc N-Channel MOSFET Transistor 2SK3511-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 12.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒

 8.18. Size:282K  inchange semiconductor
 2sk3510-s.pdf

isc N-Channel MOSFET Transistor 2SK3510-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒

 8.19. Size:288K  inchange semiconductor
 2sk3510.pdf

isc N-Channel MOSFET Transistor 2SK3510 FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 8.20. Size:289K  inchange semiconductor
 2sk3519-01.pdf

isc N-Channel MOSFET Transistor 2SK3519-01 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 8.21. Size:356K  inchange semiconductor
 2sk3510-z.pdf

isc N-Channel MOSFET Transistor 2SK3510-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒

 8.22. Size:283K  inchange semiconductor
 2sk3512l.pdf

isc N-Channel MOSFET Transistor 2SK3512L FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.52 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 8.23. Size:289K  inchange semiconductor
 2sk3514-01.pdf

isc N-Channel MOSFET Transistor 2SK3514-01 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

 8.24. Size:357K  inchange semiconductor
 2sk3512s.pdf

isc N-Channel MOSFET Transistor 2SK3512S FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.52 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

 8.25. Size:357K  inchange semiconductor
 2sk3511-zj.pdf

isc N-Channel MOSFET Transistor 2SK3511-ZJ FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 12.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒

 8.26. Size:282K  inchange semiconductor
 2sk3511-s.pdf

isc N-Channel MOSFET Transistor 2SK3511-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 12.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒