2SK3526S Datasheet and Replacement
Type Designator: 2SK3526S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 135
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2
Ohm
Package:
TO263
- MOSFET Cross-Reference Search
2SK3526S Datasheet (PDF)
..1. Size:356K inchange semiconductor
2sk3526s.pdf 
isc N-Channel MOSFET Transistor 2SK3526SFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
7.1. Size:252K fuji
2sk3526-01l-01s-01sj.pdf
2SK3526-01L,S,SJ200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofP4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
7.2. Size:282K inchange semiconductor
2sk3526l.pdf
isc N-Channel MOSFET Transistor 2SK3526LFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
8.1. Size:112K fuji
2sk3529-01.pdf
2SK3529-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
8.2. Size:106K fuji
2sk3528.pdf
2SK3528-01RFUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline DrawingsTO-3PFFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise s
8.3. Size:109K fuji
2sk3522-01.pdf
2SK3522-01200401FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeatures11.60.2High speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un
8.4. Size:254K fuji
2sk3521-01l-01s-01sj.pdf
2SK3521-01L,S,SJ200303FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerP4Avalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
8.5. Size:107K fuji
2sk3527-01.pdf
2SK3527-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeatures11.60.2High speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C un
8.6. Size:106K fuji
2sk3523.pdf
2SK3523-01RFUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline DrawingsSuper FAP-G SeriesTO-3PFFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise
8.7. Size:103K fuji
2sk3520-01mr.pdf
FUJI POWER MOSFET2003032SK3520-01MRN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unle
8.8. Size:98K fuji
2sk3525.pdf
FUJI POWER MOSFET2SK3525-01MRN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline DrawingsTO-220FFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwis
8.9. Size:105K fuji
2sk3528-01r.pdf
2SK3528-01R200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-3PFFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unles
8.10. Size:96K fuji
2sk3524-01.pdf
FUJI POWER MOSFET2SK3524-01200304N-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl
8.11. Size:290K inchange semiconductor
2sk3529-01.pdf
isc N-Channel MOSFET Transistor 2SK3529-01FEATURESDrain Current : I = 7A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 1.9(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
8.12. Size:286K inchange semiconductor
2sk3522n.pdf
isc N-Channel MOSFET Transistor 2SK3522NFEATURESDrain Current : I = 21A@ T =25D CDrain Source Voltage: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.26(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.13. Size:227K inchange semiconductor
2sk3527.pdf
isc N-Channel MOSFET Transistor 2SK3527FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou
8.14. Size:284K inchange semiconductor
2sk3523-01r.pdf
isc N-Channel MOSFET Transistor 2SK3523-01RFEATURESDrain Current : I = 21A@ T =25D CDrain Source Voltage: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.26(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.15. Size:357K inchange semiconductor
2sk3521s.pdf
isc N-Channel MOSFET Transistor 2SK3521SFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.16. Size:331K inchange semiconductor
2sk3522w.pdf
isc N-Channel MOSFET Transistor 2SK3522WFEATURESDrain Current : I = 21A@ T =25D CDrain Source Voltage: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.26(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.17. Size:279K inchange semiconductor
2sk3525-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3525-01MRFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
8.18. Size:279K inchange semiconductor
2sk3520-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3520-01MRFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
8.19. Size:283K inchange semiconductor
2sk3521l.pdf
isc N-Channel MOSFET Transistor 2SK3521LFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.20. Size:287K inchange semiconductor
2sk3528-01r.pdf
isc N-Channel MOSFET Transistor 2SK3528-01RFEATURESDrain Current : I = 17A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.37(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
8.21. Size:288K inchange semiconductor
2sk3524-01.pdf
isc N-Channel MOSFET Transistor 2SK3524-01FEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Datasheet: IRFP344
, IRFP350
, IRFP350A
, IRFP350FI
, IRFP350LC
, IRFP351
, IRFP352
, IRFP353
, 2SK3568
, IRFP360
, IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
.
History: IRF640P
| SVGP20110NSTR
| 2SK2735
| MXP4004AT
| WFU20N06
| DH100P25I
| MEE42942-G
Keywords - 2SK3526S MOSFET datasheet
2SK3526S cross reference
2SK3526S equivalent finder
2SK3526S lookup
2SK3526S substitution
2SK3526S replacement
