All MOSFET. 1N60L-TM3-T Datasheet

 

1N60L-TM3-T Datasheet and Replacement


   Type Designator: 1N60L-TM3-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO251
 

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1N60L-TM3-T Datasheet (PDF)

 ..1. Size:361K  utc
 1n60g-aa3-r 1n60l-ta3-t 1n60g-ta3-t 1n60l-tf2-t 1n60g-tf2-t 1n60l-tf3-t 1n60g-tf3-t 1n60l-tm3-t 1n60g-tm3-t.pdf pdf_icon

1N60L-TM3-T

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

 ..2. Size:479K  utc
 1n60l-aa3-r 1n60g-aa3-r 1n60l-ab3-r 1n60g-ab3-r 1n60l-tm3-t 1n60g-tm3-t 1n60l-tn3-r 1n60g-tn3-r 1n60l-t60-k 1n60g-t60-k 1n60l-t92-b 1n60g-t92-b 1n60l-t92-k 1n60g-t92-k.pdf pdf_icon

1N60L-TM3-T

UNISONIC TECHNOLOGIES CO., LTD 1N60-KW Power MOSFET 1A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

 ..3. Size:453K  utc
 1n60l-aa3-r 1n60g-aa3-r 1n60l-ta3-t 1n60g-ta3-t 1n60l-tf2-t 1n60g-tf2-t 1n60l-tf3-t 1n60g-tf3-t 1n60l-tm3-t 1n60g-tm3-t 1n60l-tms-t 1n60g-tms-t 1n60g-t92-k.pdf pdf_icon

1N60L-TM3-T

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

 ..4. Size:934K  cn vbsemi
 1n60l-tm3-t.pdf pdf_icon

1N60L-TM3-T

1N60L-TM3-Twww.VBsemi.twN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 5 RoHS Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 11RuggednessQgs (nC) 2.3 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 5.

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Datasheet: 2SK4070I , 2SK4074LS , 2SK4075B , 2SK4081 , 2SK4081D , 13N10 , 15N10-TO251 , 1812 , K4145 , 20N03L-TO252 , 20N06L-TO252 , 20N3LG-TO251 , 20P06-TO252 , 25N06L-TN3 , 25NF20 , 2N0623 , 2N65-TO252 .

History: 2SK2521-01 | DMN2215UDM | ME7820S-G | D10PF06 | 6N70KG-TM3-T | ME2309-G | IXTK100N25P

Keywords - 1N60L-TM3-T MOSFET datasheet

 1N60L-TM3-T cross reference
 1N60L-TM3-T equivalent finder
 1N60L-TM3-T lookup
 1N60L-TM3-T substitution
 1N60L-TM3-T replacement

 

 
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