20P06-TO252 PDF and Equivalents Search

 

20P06-TO252 Specs and Replacement

Type Designator: 20P06-TO252

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.061 typ Ohm

Package: TO252

20P06-TO252 substitution

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20P06-TO252 datasheet

 ..1. Size:831K  cn vbsemi
20p06-to252.pdf pdf_icon

20P06-TO252

20P06 TO252 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter S... See More ⇒

 8.1. Size:168K  vishay
sqm120p06-07l.pdf pdf_icon

20P06-TO252

SQM120P06-07L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = - 10 V 0.0067 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 4.5 V 0.0088 AEC-Q101 Qualifiedd ID (A) - 120 Material categorization Configurat... See More ⇒

 8.2. Size:390K  secos
ssd20p06-135d.pdf pdf_icon

20P06-TO252

SSD20P06-135D P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS(ON) 135m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack) process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are... See More ⇒

 8.3. Size:153K  analog power
am20p06-135d.pdf pdf_icon

20P06-TO252

Analog Power AM20P06-135D P-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC 135 @ VGS = -10V 16 converters and power management in portable and -60 battery-powered produc... See More ⇒

Detailed specifications: 2SK4081D, 13N10, 15N10-TO251, 1812, 1N60L-TM3-T, 20N03L-TO252, 20N06L-TO252, 20N3LG-TO251, AO3401, 25N06L-TN3, 25NF20, 2N0623, 2N65-TO252, 2SJ530STL, 2SJ598-Z-E1, 2SK1589-T1B, 2SK1623

Keywords - 20P06-TO252 MOSFET specs

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