All MOSFET. FCP16N60N Datasheet

 

FCP16N60N MOSFET. Datasheet pdf. Equivalent


   Type Designator: FCP16N60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 134.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40.2 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.199 Ohm
   Package: TO220

 FCP16N60N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCP16N60N Datasheet (PDF)

 ..1. Size:685K  fairchild semi
fcp16n60n fcpf16n60nt.pdf

FCP16N60N FCP16N60N

August 2009SupreMOSTMFCP16N60N / FCPF16N60NT N-Channel MOSFET600V, 16A, 0.170Features Description RDS(on) = 0.17 ( Typ.)@ VGS = 10V, ID = 8A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 40.2nC)process that differentiates it from preceding multi-epi basedte

 ..2. Size:750K  onsemi
fcp16n60n fcpf16n60nt.pdf

FCP16N60N FCP16N60N

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:257K  inchange semiconductor
fcp16n60n.pdf

FCP16N60N FCP16N60N

isc N-Channel MOSFET Transistor FCP16N60NFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

 6.1. Size:639K  fairchild semi
fcp16n60 fcpf16n60.pdf

FCP16N60N FCP16N60N

August 2014FCP16N60 / FCPF16N60N-Channel SuperFET MOSFET600 V, 16 A, 260 mFeatures DescriptionSuperFET MOSFET is Fairchild Semiconductors first genera- 650V @ TJ = 150Ction of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 220 m utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 55 nC )r

 6.2. Size:1208K  fairchild semi
fcp16n60 fcpf16n60.pdf

FCP16N60N FCP16N60N

December 2008 TMSuperFETFCP16N60 / FCPF16N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on) = 0.22balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge perfo

 6.3. Size:668K  onsemi
fcp16n60 fcpf16n60.pdf

FCP16N60N FCP16N60N

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FCI7N60 , STU616S , FCP11N60F , STU612D , FCP11N60N , STU610S , FCP13N60N , STU609S , IRFB3607 , STU608S , FCP22N60N , STU606S , FCP25N60NF102 , STU602S , FCP36N60N , STU6025NL2 , FCP4N60 .

History: STV55N05L

 

 
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