AM20P06-135 PDF and Equivalents Search

 

AM20P06-135 Specs and Replacement

Type Designator: AM20P06-135

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.061 typ Ohm

Package: TO252

AM20P06-135 substitution

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AM20P06-135 datasheet

 ..1. Size:1426K  cn vbsemi
am20p06-135.pdf pdf_icon

AM20P06-135

AM20P06-135 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter S... See More ⇒

 0.1. Size:153K  analog power
am20p06-135d.pdf pdf_icon

AM20P06-135

Analog Power AM20P06-135D P-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC 135 @ VGS = -10V 16 converters and power management in portable and -60 battery-powered produc... See More ⇒

 5.1. Size:293K  analog power
am20p06-175i.pdf pdf_icon

AM20P06-135

Analog Power AM20P06-175I P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 175 @ VGS = -10V -14 Low thermal impedance -60 200 @ VGS = -4.5V -13 Fast switching speed Typical Applications TO-251 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ... See More ⇒

 8.1. Size:139K  analog power
am20p02-60d.pdf pdf_icon

AM20P06-135

Analog Power AM20P02-60D P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) m( )ID (A) this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -4.5V 24 -20 converters, power management in... See More ⇒

Detailed specifications: 30P06, 70N06L-TQ2, 80N10, AF2301PWL, AF4502CSLA, AFN3404S23RG, AFN4172WSS8, AFP2307AS23, BS170, AM2319P-T1, AM2336N-T1, AM2339P-T1, AM2340NE-T1, AM2358N-T1, AM3401E3VR, AM4392N-T1, AM4929P-T1

Keywords - AM20P06-135 MOSFET specs

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