AM2339P-T1 PDF and Equivalents Search

 

AM2339P-T1 Specs and Replacement

Type Designator: AM2339P-T1

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 typ Ohm

Package: SOT23

AM2339P-T1 substitution

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AM2339P-T1 datasheet

 ..1. Size:1480K  cn vbsemi
am2339p-t1.pdf pdf_icon

AM2339P-T1

AM2339P-T1 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS ... See More ⇒

 7.1. Size:294K  analog power
am2339p.pdf pdf_icon

AM2339P-T1

Analog Power AM2339P P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 57 @ VGS = -4.5V -3.9 Low thermal impedance -30 89 @ VGS = -2.5V -3.2 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM... See More ⇒

 9.1. Size:295K  analog power
am2334ne.pdf pdf_icon

AM2339P-T1

Analog Power AM2334NE N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 60 @ VGS = 4.5V 3.5 Low thermal impedance 30 82 @ VGS = 2.5V 3.0 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM... See More ⇒

 9.2. Size:168K  analog power
am2334n.pdf pdf_icon

AM2339P-T1

Analog Power AM2334N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 60 @ VGS = 4.5V 3.5 converters and power management in portable and 30 battery-powered products s... See More ⇒

Detailed specifications: AF2301PWL, AF4502CSLA, AFN3404S23RG, AFN4172WSS8, AFP2307AS23, AM20P06-135, AM2319P-T1, AM2336N-T1, IRF1407, AM2340NE-T1, AM2358N-T1, AM3401E3VR, AM4392N-T1, AM4929P-T1, AM4930N-T1, AM60N10-70PC, AO2301

Keywords - AM2339P-T1 MOSFET specs

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