AM2340NE-T1 PDF and Equivalents Search

 

AM2340NE-T1 Specs and Replacement

Type Designator: AM2340NE-T1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOT23

AM2340NE-T1 substitution

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AM2340NE-T1 datasheet

 ..1. Size:1452K  cn vbsemi
am2340ne-t1.pdf pdf_icon

AM2340NE-T1

AM2340NE-T1 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)... See More ⇒

 6.1. Size:170K  analog power
am2340ne.pdf pdf_icon

AM2340NE-T1

Analog Power AM2340NE N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat 43 @ VGS = 10V 5.2 dissipation. Typical applications are DC-DC converters and power management in portable and 40 50 @ VGS = 4.5V 4.2 batter... See More ⇒

 7.1. Size:280K  analog power
am2340n.pdf pdf_icon

AM2340NE-T1

Analog Power AM2340N N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 43 @ VGS = 10V 5.2 Low thermal impedance 40 64 @ VGS = 4.5V 3.7 Fast switching speed Typical Applications SOT-23 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE ... See More ⇒

 9.1. Size:134K  analog power
am2341p.pdf pdf_icon

AM2340NE-T1

Analog Power AM2341P P - Channel 40V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low PRODUCT SUMMARY rDS(on) assures minimal power loss and conserves energy, making this device ideal VDS (V) rDS(on) ( )ID (A) for use in power management circuitry. 0.082 @ VGS = -10 V -3.2 Typical applications are lower voltage -40 application, power ... See More ⇒

Detailed specifications: AF4502CSLA, AFN3404S23RG, AFN4172WSS8, AFP2307AS23, AM20P06-135, AM2319P-T1, AM2336N-T1, AM2339P-T1, 2SK3568, AM2358N-T1, AM3401E3VR, AM4392N-T1, AM4929P-T1, AM4930N-T1, AM60N10-70PC, AO2301, AO4602

Keywords - AM2340NE-T1 MOSFET specs

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