AM4929P-T1 PDF and Equivalents Search

AM4929P-T1 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top V... See More ⇒

Analog Power AM4929P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 52 @ VGS = -4.5V -4.9 converters and power management in portable and -20 89 @ VGS = -2.5V -4.0 ... See More ⇒

Analog Power AM4920N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 34 @ VGS = 10V 6.5 Low thermal impedance 30 41 @ VGS = 4.5V 5.9 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R... See More ⇒

Analog Power AM4922N N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( )ID (A) minimal power loss and conserves energy, making 22 @ VGS = 4.5V 7.8 this device ideal for use in power management 20 circuitry. Typical applications are PWMDC-DC 28 @ VGS = 2.5V 7.0 converters, p... See More ⇒

Analog Power AM4924N N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( )ID (A) rDS(on) and to ensure minimal power loss and heat 11 @ VGS = 4.5V 11 dissipation. Typical applications are DC-DC 20 converters and power management in portable and 14 @ VGS = 2.5V 10 battery-p... See More ⇒

Analog Power AM4926N Dual N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) m( )ID (A) this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 58 @ VGS = 4.5V 5.0 converters, power management in... See More ⇒

AiT Semiconductor Inc. AM4920 www.ait-ic.com MOSFET 30V DUAL N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4920 is the Dual N-Channel logic 30V / 7.8A, R =16m (typ.)@V =10V DS(ON) GS enhancement mode power field effect transistor is 30V / 5.8A, R =28m (typ.)@V =4.5V DS(ON) GS produced using high cell density. Advanced trench Super high density cell design f... See More ⇒