AM4930N-T1 MOSFET Datasheet: N-Ch, 30V, 6.2A. Full specification with pinout and replacement list

AM4930N-T1 Specs and Replacement

Type Designator: AM4930N-T1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 117 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 typ Ohm

Package: SO8

AM4930N-T1 substitution

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AM4930N-T1 datasheet

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7.1. Size:214K analog power
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Analog Power AM4930N Dual N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 58 @ VGS = 4.5V 5.0 battery-powered products ... See More ⇒

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Analog Power AM4932N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 13.5 @ VGS = 4.5V 10 Low thermal impedance 30 20 @ VGS = 2.5V 8 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R... See More ⇒

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Analog Power AM4934N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 18 @ VGS = 10V 8.9 Low thermal impedance 30 26 @ VGS = 4.5V 7.4 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R... See More ⇒