AO2301 Specs and Replacement
Type Designator: AO2301
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 typ Ohm
Package: SOT23
AO2301 substitution
- MOSFET ⓘ Cross-Reference Search
AO2301 datasheet
ao2301.pdf
AO2301 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS ... See More ⇒
Detailed specifications: AM2339P-T1, AM2340NE-T1, AM2358N-T1, AM3401E3VR, AM4392N-T1, AM4929P-T1, AM4930N-T1, AM60N10-70PC, 20N50, AO4602, AO4606A, AO4614-30V, AO4816, AOD438, AOD522, AP10P10GH, AP2300GN
Keywords - AO2301 MOSFET specs
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