AP4953M Datasheet and Replacement
Type Designator: AP4953M
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 215 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035(typ) Ohm
Package: SO8
AP4953M substitution
AP4953M Datasheet (PDF)
ap4953m.pdf

AP4953Mwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top View
ap4953gm-hf.pdf

AP4953GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD2D2 Low Gate Charge RDS(ON) 53mD1D1 Fast Switching ID -5AG2 RoHS CompliantS2G1SO-8S1D2Description D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G2G
ap4953gm.pdf

AP4953GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD2D2 Low Gate Charge RDS(ON) 53mD1D1 Fast Switching ID -5AG2S2G1SO-8S1D2Description D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G2G1ruggedized device
Datasheet: AP2301N , AP2305GN , AP2306AGN , AP2306N , AP2308GE , AP2309AGN , AP2310GG , AP4565GM-30V , 60N06 , AP85U03GH , AP9435GG , AP9435GK , AP9435K , AP9563M , AP9579GM , AP9997GH , APM1110NUC .
History: 2SK1769 | FHD15N10A | BL4N65A-D | AOB411L | P0306BT | IRF353 | AFN3426
Keywords - AP4953M MOSFET datasheet
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History: 2SK1769 | FHD15N10A | BL4N65A-D | AOB411L | P0306BT | IRF353 | AFN3426



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