STU602S Datasheet and Replacement

GreenProduct STU/D602SSamHop Microelectronics Corp.Aug 26,2006N-Channel Enhancement Mode Field Effect TransistorPRODUCT SUMMARY FEATURESSuper high dense cell design for low RDS(ON).VDSS IDRDS(ON) ( m ) MaxRugged and reliable.30 @ VGS = 10V22A60VTO-252 and TO-251 Package.38@VGS = 4.5VDDDGGSSGSTU SERIES STD SERIESTO-252AA(D-PAK) TO-251(l-PAK)S

GreenProductSTU/D6025NL2aS mHop Microelectronics C orp.Ver 2.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.6.5 @ VGS=10VSuface Mount Package.30V 60A9.5 @ VGS=4.5VGGSSSTU SERIES STD SERIESTO-252AA(D-PAK) TO-251(I-PAK)(TA=25

GreenProductSTU/D6025NLSamHop Microelectronics Corp. Feb 25,2006 Ver1.2N-Channel Logic Level Enhancement Mode Field Effect TransistorPRODUCT SUMMARY FEATURESSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) ( m ) TypRugged and reliable.5.5 @ VGS = 10V30V 60ATO-252 and TO-251 Package.8 @ VGS = 4.5VDDDGGSSGSTU SERIES STD SERIESTO-252AA(D-P

STD60N3LH5, STP60N3LH5STU60N3LH5, STU60N3LH5-SN-channel 30 V, 0.0072 , 48 A DPAK, IPAK, Short IPAK, TO-220STripFET V Power MOSFETFeaturesOrder codes VDSS RDS(on) max ID3STD60N3LH5 30 V 0.008 48 A 213STP60N3LH5 30 V 0.0084 48 A 21IPAKTO-220STU60N3LH5 30 V 0.0084 48 ASTU60N3LH5-S 30 V 0.0084 48 A RDS(on) * Qg industry benchmark32 Extr

STD60N3LH5STP60N3LH5, STU60N3LH5N-channel 30 V, 0.0072 , 48 A DPAK, IPAK, TO-220STripFET V Power MOSFETFeaturesType VDSS RDS(on) max IDSTD60N3LH5 30 V 0.008 48 A 32STP60N3LH5 30 V 0.0084 48 A1STU60N3LH5 30 V 0.0084 48 ATO-220 RDS(on) * Qg industry benchmark3 Extremely low on-resistance RDS(on) 3211 Very low switching gate charge

STB60N55F3, STD60N55F3, STF60N55F3STI60N55F3, STP60N55F3, STU60N55F3N-channel 55 V, 6.5 m, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220TO-220FP STripFET III Power MOSFETFeaturesType VDSS RDS(on) ID Pw332131STB60N55F3 55V

GreenProductSTU/D600SSamHop Microelectronics Corp. Aug 25,2006N-Channel Enhancement Mode Field Effect TransistorPRODUCT SUMMARY FEATURESSuper high dense cell design for low RDS(ON).VDSS IDRDS(ON) ( m W ) MaxRugged and reliable.55 @ VGS = 10V16A60VTO-252 and TO-251 Package.70 @ VGS = 4.5VDDGSGSTU SERIES STD SERIESTO-252AA(D-PAK) TO-251(l-PAK)SABSOL

GreenProductSTU/D606SaS mHop Microelectronics C orp.Ver 1.2N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.56 @ VGS=10VSuface Mount Package.60V 21A68 @ VGS=4.5V GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKA

rPPrPPSTU601SaS mHop Microelectronics C orp.Ver 2.0P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.95 @ VGS=-10VSuface Mount Package.-60V -15A125 @ VGS=-4.5VESD Protected.GGSSSTU SERIES( )TO - 252AA D- PAK(TC=25C u

GrPPrPPSTU/D609SaS mHop Microelectronics C orp.Ver 1.1P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m ) MaxRugged and reliable.53 @ VGS=-10VTO-252 and TO-251 Package.-60V -20A80 @ VGS=-4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO -

STU/D608SSamHop Microelectronics Corp.Feb. 06 2007N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS IDRDS(ON) ( m ) MaxRugged and reliable.55 @ VGS = 10VTO-252 and TO-251 Package.60V 16A65@VGS = 4.5VESD Protected.DDGSGSTU SERIES STD SERIESTO-252AA(D-PAK) TO-251(l-PAK)SABSOLU