APM2323AAC MOSFET Datasheet: P-Ch, 20V, 4.5A. Full specification with pinout and replacement list

APM2323AAC Specs and Replacement

Type Designator: APM2323AAC

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 typ Ohm

Package: SOT23

APM2323AAC substitution

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APM2323AAC datasheet

..1. Size:1476K cn vbsemi
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APM2323AAC www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS ... See More ⇒

8.1. Size:166K sino
apm2324aa.pdf pdf_icon

APM2324AA N-Channel Enhancement Mode MOSFET Features Pin Description 20V/3A, D RDS(ON)= 50m (Typ.) @ VGS= 4.5V S RDS(ON)= 65m (Typ.) @ VGS= 2.5V G RDS(ON)= 120m (Typ.) @ VGS= 1.8V Reliable and Rugged Top View of SOT-23 Lead Free and Green Devices Available (RoHS Compliant) D G Applications Power Management in Notebook Computer, Portable Equipment and Ba... See More ⇒

8.2. Size:410K cn shikues
apm2324a.pdf pdf_icon

APM2324A N-Channel Enhancement Mode MOSFET Channel Enhancement Mode MOSFET Feature 20V/3A, RDS(ON) = 80m (MAX) @VGS = 4.5V. = 4.5V. RDS(ON) = 90m (MAX) @VGS = 2.5V. = 2.5V. Super High dense cell design for extremely low R Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SC-59 for Surface Mount Package. Applications Power ... See More ⇒

8.3. Size:870K cn vbsemi
apm2321ac.pdf pdf_icon

APM2321AC www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIO... See More ⇒