All MOSFET. CEA3055L Datasheet

 

CEA3055L Datasheet and Replacement


   Type Designator: CEA3055L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 10 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03(typ) Ohm
   Package: SOT89
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CEA3055L Datasheet (PDF)

 ..1. Size:868K  cn vbsemi
 cea3055l.pdf pdf_icon

CEA3055L

CEA3055Lwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.030 at VGS = 10 V 8.0 TrenchFET Power MOSFETs600.036 at VGS = 4.5 V 6.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDDGSG D S N-Channel MOSFET ABSOLUTE MA

 7.1. Size:868K  cn vbsemi
 cea3055.pdf pdf_icon

CEA3055L

CEA3055www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.030 at VGS = 10 V 8.0 TrenchFET Power MOSFETs600.036 at VGS = 4.5 V 6.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDDGSG D S N-Channel MOSFET ABSOLUTE MAX

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History: TK2P60D | SRADM1005 | IRFBG20

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