All MOSFET. CEM4936 Datasheet

 

CEM4936 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEM4936
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 6.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 117 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022(typ) Ohm
   Package: SO8

 CEM4936 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEM4936 Datasheet (PDF)

 ..1. Size:897K  cn vbsemi
 cem4936.pdf

CEM4936 CEM4936

CEM4936www.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

 9.1. Size:503K  cet
 cem4953.pdf

CEM4936 CEM4936

 9.2. Size:141K  cet
 cem4948.pdf

CEM4936 CEM4936

CEM4948Dual P-Channel Enhancement Mode Field Effect TransistorFEATURES5-60V, -3.1A, RDS(ON) = 120m @VGS = -10V. RDS(ON) = 150m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA =

 9.3. Size:526K  cet
 cem4953a.pdf

CEM4936 CEM4936

CEM4953ADual P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -4.5A, RDS(ON) = 58m @VGS = -10V. RDS(ON) = 85m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25

 9.4. Size:424K  cet
 cem4953h.pdf

CEM4936 CEM4936

CEM4953HDual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-30V, -4.5A, RDS(ON) = 64m @VGS = -10V. RDS(ON) = 95m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead-free plating ; RoHS compliant.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM

 9.5. Size:914K  cn vbsemi
 cem4946.pdf

CEM4936 CEM4936

CEM4946www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2N4867

 

 
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