All MOSFET. CEM9956A Datasheet

 

CEM9956A MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEM9956A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 6.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 117 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022(typ) Ohm
   Package: SO8

 CEM9956A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEM9956A Datasheet (PDF)

 ..1. Size:890K  cn vbsemi
 cem9956a.pdf

CEM9956A CEM9956A

CEM9956Awww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

 8.1. Size:141K  cet
 cem9953a.pdf

CEM9956A CEM9956A

CEM9953ADual P-Channel Enhancement Mode Field Effect TransistorFEATURES5-30V, -3.5A, RDS(ON) = 80m @VGS = -10V. RDS(ON) = 130m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA =

 9.1. Size:139K  cet
 cem9936a.pdf

CEM9956A CEM9956A

CEM9936ADual N-Channel Enhancement Mode Field Effect TransistorFEATURES530V, 5.4A, RDS(ON) = 40m @VGS = 10V. RDS(ON) = 55m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. D1 D1 D2 D28 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C

 9.2. Size:409K  cet
 cem9926a.pdf

CEM9956A CEM9956A

CEM9926ADual N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 6A, RDS(ON) = 27m @VGS = 4.5V. RDS(ON) = 40m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D2Lead free product is acquired.8 7 6 5Surface mount Package.SO-81 2 3 41S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS TA = 25 C unl

 9.3. Size:141K  cet
 cem9935a.pdf

CEM9956A CEM9956A

CEM9935ADual N-Channel Enhancement Mode Field Effect TransistorFEATURES520V, 6.0A, RDS(ON) = 36m @VGS = 10V. RDS(ON) = 42m @VGS = 4.5V. RDS(ON) = 75m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.D1 D1 D2 D28 7 6 5Lead free product is acquired.Surface mount Package.SO-81 2 3 41S1 G1 S2 G2AB

 9.4. Size:843K  cn vbsemi
 cem9926.pdf

CEM9956A CEM9956A

CEM9926www.VBsemi.twDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D2

 9.5. Size:897K  cn vbsemi
 cem9936a.pdf

CEM9956A CEM9956A

CEM9936Awww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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