All MOSFET. CEU20N06 Datasheet

 

CEU20N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEU20N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: TO252

 CEU20N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEU20N06 Datasheet (PDF)

 ..1. Size:808K  cn vbsemi
ceu20n06.pdf

CEU20N06
CEU20N06

CEU20N06www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

 7.1. Size:237K  cet
ced20n02 ceu20n02.pdf

CEU20N06
CEU20N06

CED20N02/CEU20N02N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 18A, RDS(ON) = 42m @VGS = 4.5V. RDS(ON) = 75m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXI

 9.1. Size:373K  cet
ced20p10 ceu20p10.pdf

CEU20N06
CEU20N06

CED20P10/CEU20P10PRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURES-100V, -16A, RDS(ON) = 130m @VGS = -10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.DTO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATING

 9.2. Size:428K  cet
ced20p06 ceu20p06.pdf

CEU20N06
CEU20N06

CED20P06/CEU20P06P-Channel Enhancement Mode Field Effect TransistorFEATURES-60V, -13A, RDS(ON) = 125m @VGS = -10V. RDS(ON) = 175m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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