All MOSFET. CMD20N06L Datasheet

 

CMD20N06L Datasheet and Replacement


   Type Designator: CMD20N06L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: TO252
 

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CMD20N06L Datasheet (PDF)

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CMD20N06L

CMD20N06Lwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n

 9.1. Size:881K  cn vbsemi
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CMD20N06L

CMD20P03www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.033 at VGS = - 10 V - 26 100 % Rg TestedRoHS- 30 19 nCCOMPLIANT 100 % UIS Tested0.046 at VGS = - 4.5 V - 21APPLICATIONS Load Switch Notebook Adaptor SwitchSTO-252GG D SDTop ViewP-Ch

Datasheet: CEG8205 , CEM4936 , CEM4946 , CEM9926 , CEM9956A , CEU20N06 , CEU50N06 , CHMP830JGP , IRF9540N , CMD20P03 , CMD50N06B , CMD50P03 , CMD5950 , CMN2305M , CMU12N10 , CPH3427-TL , CSD17301Q5 .

History: AP04N60J | SI7192DP | RU2020H | HSBB02P15 | AP4957AGM | LRC6N33YT1G | PTD4N60

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