DTM4946 MOSFET Datasheet: N-Ch, 60V, 7A. Full specification with pinout and replacement list

DTM4946 Specs and Replacement

Type Designator: DTM4946

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.3 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SO8

DTM4946 substitution

- MOSFET ⓘ Cross-Reference Search

DTM4946 datasheet

..1. Size:913K cn vbsemi
dtm4946.pdf pdf_icon

DTM4946 www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel ... See More ⇒

9.1. Size:739K cn vbsemi
dtm4926.pdf pdf_icon

DTM4926 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.010 at VGS = 10 V 12 30 5.9 nC Optimized for High-Side Synchronous 0.012 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO... See More ⇒

Detailed specifications: DMG6968U-7, DMN4468LSS-13, DMN6040SK3-13, DMN6068LK3-13, DMN6068SE-13, DMP3025LK3-13, DMP3056LSD-13, DTM4926, SI2302, DTU09N03, E10P02, EMB60N06A, EMFA0P02J, F3055L-TO252, FDD390N15AL, FDD3N40TM, FDD8444-NL