FDS4435-NL PDF and Equivalents Search

 

FDS4435-NL Specs and Replacement

Type Designator: FDS4435-NL

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 typ Ohm

Package: SO8

FDS4435-NL substitution

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FDS4435-NL datasheet

 ..1. Size:2378K  cn vbsemi
fds4435-nl.pdf pdf_icon

FDS4435-NL

FDS4435-NL www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D... See More ⇒

 7.1. Size:64K  fairchild semi
fds4435.pdf pdf_icon

FDS4435-NL

October 2001 FDS4435 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8.8 A, 30 V R = 20 m @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 35 m @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave ... See More ⇒

 7.2. Size:296K  fairchild semi
fds4435bz f085.pdf pdf_icon

FDS4435-NL

July 2009 FDS4435BZ_F085 P-Channel PowerTrench MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductor s advanced PowerTrench process that has Extended VGSS range (-25V) for battery applications been especially tailored to mi... See More ⇒

 7.3. Size:172K  fairchild semi
fds4435a.pdf pdf_icon

FDS4435-NL

October 2001 FDS4435A P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using -9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V Fairchild Semiconductor s advanced PowerTrench process RDS(ON) = 0.025 W @ VGS = -4.5 V that has been especially tailored to minimize the on-state resistance and yet maintain low gate charg... See More ⇒

Detailed specifications: FDD390N15AL, FDD3N40TM, FDD8444-NL, FDD8580-6, FDN304P-NL, FDN335N-NL, FDN337N-NL, FDN338P-NL, STP65NF06, FDS4450, FDS4465-NL-9, FDS4685-NL, FDS4897A, FDS4935BZ-NL-38, FDS4936, FDS6675B, FDS8333C

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