FDS4935BZ-NL-38
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDS4935BZ-NL-38
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 7.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 32
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 215
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035(typ)
Ohm
Package:
SO8
FDS4935BZ-NL-38
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDS4935BZ-NL-38
Datasheet (PDF)
0.1. Size:850K cn vbsemi
fds4935bz-nl-38.pdf
FDS4935BZ-NL&-38www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25
5.1. Size:158K fairchild semi
fds4935bz.pdf
September 2006tmFDS4935BZDual 30 Volt P-Channel PowerTrench MOSFET General Description FeaturesThis P-Channel MOSFET has been designed 6.9 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 35 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery
5.2. Size:154K onsemi
fds4935bz.pdf
September 2006tmFDS4935BZDual 30 Volt P-Channel PowerTrench MOSFET General Description FeaturesThis P-Channel MOSFET has been designed 6.9 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 35 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery
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