FDS8984-NL MOSFET. Datasheet pdf. Equivalent
Type Designator: FDS8984-NL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 6.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 117 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022(typ) Ohm
Package: SO8
FDS8984-NL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDS8984-NL Datasheet (PDF)
fds8984-nl.pdf
FDS8984-NLwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box
fds8984-f085.pdf
FDS8984-F085N-Channel PowerTrench MOSFET30V, 7A, 23mGeneral Description Features Max rDS(on) = 23m, VGS = 10V, ID = 7AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m, VGS = 4.5V, ID = 6Aeither synchronous or conventional switching PWM controllers. It has been optimized for low gate c
fds8984.pdf
May 2007FDS8984tmN-Channel PowerTrench MOSFET30V, 7A, 23mGeneral Description Features Max rDS(on) = 23m, VGS = 10V, ID = 7AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m, VGS = 4.5V, ID = 6A either synchronous or conventional switching PWM controllers. It has been optimized for
fds8984 f085.pdf
Fabruary 2010FDS8984_F085tmN-Channel PowerTrench MOSFET30V, 7A, 23mGeneral Description Features Max rDS(on) = 23m, VGS = 10V, ID = 7AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m, VGS = 4.5V, ID = 6A either synchronous or conventional switching PWM controllers. It has been opti
fds8984.pdf
May 2007FDS8984tmN-Channel PowerTrench MOSFET30V, 7A, 23mGeneral Description Features Max rDS(on) = 23m, VGS = 10V, ID = 7AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 30m, VGS = 4.5V, ID = 6A either synchronous or conventional switching PWM controllers. It has been optimized for
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
LIST
Last Update
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100