FDT1600N10A Specs and Replacement
Type Designator: FDT1600N10A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 typ Ohm
Package: SOT223
FDT1600N10A substitution
- MOSFET ⓘ Cross-Reference Search
FDT1600N10A datasheet
fdt1600n10a.pdf
FDT1600N10A www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs 100 0.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET ... See More ⇒
fdt1600n10alz.pdf
November 2013 FDT1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 5.6 A, 160 m Features Description RDS(on) = 121 m (Typ.) @ VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchld Semicon- ductor s advanced PowerTrench process that has been tai- RDS(on) = 156 m (Typ.) @ VGS = 5 V, ID = 1.8 A lored to minimize the on-state resistance and maintain superi... See More ⇒
fdt1600n10alz.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FDS4936, FDS6675B, FDS8333C, FDS8435A, FDS8984-NL, FDS9435, FDS9435A-NL, FDS9945-NL, AOD4184A, FDW2601NZ, FL014N, FNK10N25B, FQD13N10LTF, FQD20N06LE, FQU13N06, FQU13N10, FR120N
Keywords - FDT1600N10A MOSFET specs
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