FTD2017A
MOSFET. Datasheet pdf. Equivalent
Type Designator: FTD2017A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 5.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 330
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027
Ohm
Package:
TSSOP8
FTD2017A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FTD2017A
Datasheet (PDF)
..1. Size:985K cn vbsemi
ftd2017a.pdf 
FTD2017Awww.VBsemi.twDual N-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.022 at VGS = 4.5 V Available6.625RoHS*0.032 at VGS = 2.5 V 5.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RATI
7.1. Size:42K sanyo
ftd2017.pdf
Ordering number:ENN6361N-Channel Silicon MOSFETFTD2017Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2155A Mounting height 1.1mm.[FTD2017] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 4 3 : Source10.1254 : Gate10.255 : Gate26 : Source27 : Source28
7.2. Size:2022K cn vbsemi
ftd2017.pdf
FTD2017www.VBsemi.twDual N-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.022 at VGS = 4.5 V Available6.625RoHS*0.032 at VGS = 2.5 V 5.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RATIN
8.1. Size:41K sanyo
ftd2014.pdf
Ordering number:ENN6267N-Channel Silicon MOSFETFTD2014Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2155A Mounting height 1.1mm.[FTD2014] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 43 : Source10.1254 : Gate10.255 : Gate26 : Source27 : Source2
8.2. Size:42K sanyo
ftd2019.pdf
Ordering number:ENN6383N-Channel Silicon MOSFETFTD2019Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2155A Mounting height 1.1mm.[FTD2019] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 4 3 : Source10.1254 : Gate10.255 : Gate26 : Source27 : Source28
8.3. Size:76K sanyo
ftd2013.pdf
Ordering number:ENN6080AN-Channel Silicon MOSFETFTD2013Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2155A Mounting height 1.1mm.[FTD2013] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 4 3 : Source10.1254 : Gate10.255 : Gate26 : Source27 : Source2
8.4. Size:41K sanyo
ftd2015.pdf
Ordering number:ENN6393N-Channel Silicon MOSFETFTD2015Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2155A Mounting height 1.1mm.[FTD2015] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 4 3 : Source10.1254 : Gate10.255 : Gate26 : Source27 : Source28 :
8.5. Size:69K sanyo
ftd2011.pdf
Ordering number:ENN6072AN-Channel Silicon MOSFETFTD2011Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 2.5V drive.2155A Mounting height 1.1mm.[FTD2011] Composite type, facilitating high-density mounting.3.0 0.4250.658 51 : Drain12 : Source11 4 3 : Source10.1254 : Gate10.255 : Gate26 : Source27 : Source2
8.6. Size:76K kexin
ftd2019.pdf
SMD Type TransistorsDual N-Channel Enhancement Mode MOSFETFTD2019TSSOP-8 FeaturesUnit: mm RDS(ON)=28m Max. @VGS=4V RDS(ON)=35m Max. @VGS=2.5V1 : Drain12 : Source13 : Source14 : Gate1D1 D25 : Gate2S2S16 : Source2S2S17 : Source2G2D1 8 : Drain2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 30
8.7. Size:74K kexin
ftd2011.pdf
SMD Type MOSFETDual N-Channel Enhancement Mode MOSFETFTD2011TSSOP-8Unit: mm Features RDS(ON)=30m Max. @VGS=4V RDS(ON)=45m Max. @VGS=2.5V1 : Drain12 : Source13 : Source14 : Gate15 : Gate26 : Source2D1D27 : Source2S1S2 8 : Drain2S1 S2G1G2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 20 VG
Datasheet: WPB4002
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