HAF2007-90S MOSFET. Datasheet pdf. Equivalent

   Type Designator: HAF2007-90S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 41.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 16.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19.8 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.073(typ) Ohm
   Package: TO252

HAF2007-90S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HAF2007-90S Datasheet (PDF)

..1. Size:1501K cn vbsemi
haf2007-90s.pdf

HAF2007-90Swww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Mo

7.1. Size:106K renesas
haf2007l haf2007s.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

9.1. Size:129K renesas
haf2011l haf2011s.pdf