HM3400PR PDF and Equivalents Search

 

HM3400PR Specs and Replacement

Type Designator: HM3400PR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm

Package: SOT89

HM3400PR substitution

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HM3400PR datasheet

 ..1. Size:1663K  cn vbsemi
 hm3400pr.pdf pdf_icon

HM3400PR

HM3400PR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.022 at VGS = 4.5 V 6.8 RoHS 30 10 nC COMPLIANT APPLICATIONS 0.027 at VGS = 2.5 V 6.0 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n... See More ⇒

 8.1. Size:384K  cn hmsemi
 hm3400 sot23-3l.pdf pdf_icon

HM3400PR

HM3400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400 uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S GENERAL FEATURES VDS = 30V,ID = 5.8A Schematic diagram RDS(ON) ... See More ⇒

 8.2. Size:478K  cn hmsemi
 hm3400c.pdf pdf_icon

HM3400PR

N-Channel Enhancement Mode Power MOSFET D Description The uses advanced trench technology to provide G excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = 30V,ID = 3.6A RDS(ON) ... See More ⇒

 8.3. Size:679K  cn hmsemi
 hm3400dr.pdf pdf_icon

HM3400PR

HM3400DR N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400DR uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S GENERAL FEATURES VDS = 30V,ID = 8 A Schematic diagram RDS(ON) ... See More ⇒

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Detailed specifications: HAT2064RJ, HM10N10K, HM2300, HM2301KR, HM2305PR, HM2310, HM2310PR, HM25P06K, AO3401, HM4409, HM4410, HM70P04K, HM8810E, HS50N06DA, IM2132, IM4435G, IPP048N04

Keywords - HM3400PR MOSFET specs

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