IPP048N06 Specs and Replacement

Type Designator: IPP048N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 210 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 1000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 typ Ohm

Package: TO220AB

IPP048N06 substitution

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IPP048N06 datasheet

 ..1. Size:1926K  cn vbsemi
ipp048n06.pdf pdf_icon

IPP048N06

IPP048N06 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.0035 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0090 Package with Low Thermal Resistance ID (A) 210 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Directive 2002/9... See More ⇒

 0.1. Size:734K  infineon
ipb048n06lg ipp048n06lg5.pdf pdf_icon

IPP048N06

IPP048N06L G IPB048N06L G Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R 4 4 m , ?> =1G ,' E5AB9?> P ( 381>>581>35=5>C ... See More ⇒

 6.1. Size:565K  infineon
ipp048n04n.pdf pdf_icon

IPP048N06

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 6.2. Size:2138K  cn vbsemi
ipp048n04.pdf pdf_icon

IPP048N06

IPP048N04 www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0055 at VGS = 10 V 100 COMPLIANT 40 130 nC 0.0070 at VGS = 4.5 V 90 APPLICATIONS Synchronous Rectification TO-220AB Power Supplies D G S G D S Top View N-Channel MOSFET ABSOLUT... See More ⇒

Detailed specifications: HM4409, HM4410, HM70P04K, HM8810E, HS50N06DA, IM2132, IM4435G, IPP048N04, 12N60, IRF3410, IRF4435TR, IRF5305STR, IRF540NSTRPBF, IRF540ZP, IRF5802TR, IRF5803TRPBF, IRF5805TRPBF

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs