IPP048N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPP048N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 375 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 210 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 180 nC
Rise Time (tr): 23 nS
Drain-Source Capacitance (Cd): 1000 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0035(typ) Ohm
Package: TO220AB
IPP048N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPP048N06 Datasheet (PDF)
ipp048n06.pdf
IPP048N06www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0090 Package with Low Thermal ResistanceID (A) 210 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directive 2002/9
ipb048n06lg ipp048n06lg5.pdf
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ipp048n04n.pdf
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ipp048n04.pdf
IPP048N04www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0055 at VGS = 10 V 100COMPLIANT 40 130 nC0.0070 at VGS = 4.5 V 90APPLICATIONS Synchronous RectificationTO-220AB Power SuppliesDGSG D STop ViewN-Channel MOSFETABSOLUT
ipp048n04n.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP048N04NIIPP048N04NFEATURESStatic drain-source on-resistance:RDS(on) 4.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAX
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF4905 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: SI4532ADY-T1
History: SI4532ADY-T1
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