IRF540NSTRPBF Spec and Replacement
Type Designator: IRF540NSTRPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 127 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 410 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03(typ) Ohm
Package: TO263
IRF540NSTRPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF540NSTRPBF Specs
irf540nstrpbf.pdf
IRF540NSTRPBF www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 45 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 40 COMPLIANT D D2PAK (TO-263) G D G S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, ... See More ⇒
irf540ns irf540nl.pdf
PD - 91342B IRF540NS IRF540NL l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 44m Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing ID = 33A S techniques to achieve extremely l... See More ⇒
irf540ns.pdf
PD - 91342 IRF540NS IRF540NL Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche Rated RDS(on) = 44m Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing ID = 33A S techniques to achieve extremely low on-r... See More ⇒
irf540nlpbf irf540nspbf.pdf
PD - 95130 IRF540NSPbF IRF540NLPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 44m l Lead-Free G Description Advanced HEXFET Power MOSFETs from ID = 33A International Rectifier utilize advanced processing S techniques to achi... See More ⇒
Detailed specifications: HS50N06DA , IM2132 , IM4435G , IPP048N04 , IPP048N06 , IRF3410 , IRF4435TR , IRF5305STR , AON6380 , IRF540ZP , IRF5802TR , IRF5803TRPBF , IRF5805TRPBF , IRF5851TR , IRF610P , IRF630P , IRF640P .
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