IRF540NSTRPBF Datasheet. Specs and Replacement

Type Designator: IRF540NSTRPBF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 127 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 410 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 typ Ohm

Package: TO263

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IRF540NSTRPBF datasheet

 ..1. Size:1657K  cn vbsemi
irf540nstrpbf.pdf pdf_icon

IRF540NSTRPBF

IRF540NSTRPBF www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 45 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 40 COMPLIANT D D2PAK (TO-263) G D G S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, ... See More ⇒

 6.1. Size:277K  international rectifier
irf540ns irf540nl.pdf pdf_icon

IRF540NSTRPBF

PD - 91342B IRF540NS IRF540NL l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 44m Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing ID = 33A S techniques to achieve extremely l... See More ⇒

 6.2. Size:125K  international rectifier
irf540ns.pdf pdf_icon

IRF540NSTRPBF

PD - 91342 IRF540NS IRF540NL Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche Rated RDS(on) = 44m Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing ID = 33A S techniques to achieve extremely low on-r... See More ⇒

 6.3. Size:279K  international rectifier
irf540nlpbf irf540nspbf.pdf pdf_icon

IRF540NSTRPBF

PD - 95130 IRF540NSPbF IRF540NLPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 44m l Lead-Free G Description Advanced HEXFET Power MOSFETs from ID = 33A International Rectifier utilize advanced processing S techniques to achi... See More ⇒

Detailed specifications: HS50N06DA, IM2132, IM4435G, IPP048N04, IPP048N06, IRF3410, IRF4435TR, IRF5305STR, AON6380, IRF540ZP, IRF5802TR, IRF5803TRPBF, IRF5805TRPBF, IRF5851TR, IRF610P, IRF630P, IRF640P

Keywords - IRF540NSTRPBF MOSFET specs

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