IRF5803TRPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF5803TRPBF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TSOP6
IRF5803TRPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF5803TRPBF Datasheet (PDF)
irf5803trpbf.pdf
IRF5803TRPBFwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mm
irf5803d2.pdf
PD- 94016IRF5803D2TMFETKY MOSFET & Schottky Diode Co-packaged HEXFET Power1 8A KMOSFET and Schottky DiodeVDSS = -40V2 7 Ideal For Buck Regulator Applications A K P-Channel HEXFET3 6RDS(on) = 112mS D Low VF Schottky Rectifier45G D SO-8 Footprint Schottky Vf = 0.51VTop ViewDescriptionThe FETKYTM family of Co-packaged HEXFETs andSchottky
irf5803.pdf
PD-94015IRF5803HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) P-Channel MOSFET-40V 112@VGS = -10V -3.4A Surface Mount 190@VGS = -4.5V -2.7A Available in Tape & Reel Low Gate ChargeDescriptionThese P-channel HEXFET Power MOSFETs from A1 6D DInternational Rectifier utilize advanced processingtechniques to achieve t
irf5803d2pbf.pdf
PD- 95160AIRF5803D2PbFTMFETKY MOSFET & Schottky Diodel Co-packaged HEXFET PowerMOSFET and Schottky Diode1 8A Kl Ideal For Buck Regulator ApplicationsVDSS = -40V2 7A Kl P-Channel HEXFETl Low VF Schottky Rectifier3 6RDS(on) = 112mS Dl SO-8 Footprint45G Dl Lead-Free Schottky Vf = 0.51VTop ViewDescriptionThe FETKYTM family of Co-packaged HEXF
irf5803pbf.pdf
IRF5803PbF HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET VDSS RDS(on) (max) ID Surface Mount 112m@ VGS = -10V -3.4A Available in Tape & Reel - 40V Low Gate Charge 190m@ VGS = -4.5V -2.7A Lead-Free Halogen-Free A1 6D DDescription These P-channel HEXFET Power MOSFETs from International 25DDR
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
