IRF630P Datasheet and Replacement

IRF630Pwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature0.270 at VGS =10V10200 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchTO-220ABDGSN-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATI

PD- 95916IRF630PbF Lead-Free9/27/04Document Number: 91031 www.vishay.com1IRF630PbFDocument Number: 91031 www.vishay.com2IRF630PbFDocument Number: 91031 www.vishay.com3IRF630PbFDocument Number: 91031 www.vishay.com4IRF630PbFDocument Number: 91031 www.vishay.com5IRF630PbFDocument Number: 91031 www.vishay.com6IRF630PbFPeak Diode Recovery dv/dt T

IRF630, SiHF630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.40RoHS* Fast SwitchingQg (Max.) (nC) 43COMPLIANT Ease of ParallelingQgs (nC) 7.0Qgd (nC) 23 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD

IRF630B/IRFS630B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been especially tailored to Fast switchin

PD - 95047AIRF630NPbFIRF630NSPbFl Advanced Process TechnologyIRF630NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive RequirementsRDS(on) = 0.30Gl Lead-FreeDescriptionID = 9.3AFifth Generation HEXFET Power MOSFETs fromSInternational Rec

PD - 95047AIRF630NPbFIRF630NSPbFl Advanced Process TechnologyIRF630NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive RequirementsRDS(on) = 0.30Gl Lead-FreeDescriptionID = 9.3AFifth Generation HEXFET Power MOSFETs fromSInternational Rec

PD - 95118IRF630SPbF Lead-Free3/17/04Document Number: 91032 www.vishay.com1IRF630SPbFDocument Number: 91032 www.vishay.com2IRF630SPbFDocument Number: 91032 www.vishay.com3IRF630SPbFDocument Number: 91032 www.vishay.com4IRF630SPbFDocument Number: 91032 www.vishay.com5IRF630SPbFDocument Number: 91032 www.vishay.com6IRF630SPbFD2Pak Package Outli

PD - 94005AIRF630NIRF630NSIRF630NL Advanced Process TechnologyHEXFET Power MOSFET Dynamic dv/dt Rating 175C Operating Temperature DVDSS = 200V Fast Switching Fully Avalanche RatedRDS(on) = 0.30 Ease of ParallelingG Simple Drive RequirementsDescriptionID = 9.3AFifth Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced proces

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF630, IRF630S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 9 AgRDS(ON) 400 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using Trench technology

IRF630IRF630FP N - CHANNEL 200V - 0.35 - 9A - TO-220/FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDIRF630 200 V

www.DataSheet4U.comIRF630MIRF630MFPN-CHANNEL 200V - 0.35 - 9A TO-220/TO-220FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDIRF630M 200 V

IRF630MIRF630MFPN-CHANNEL 200V - 0.35 - 9A TO-220/TO-220FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDIRF630M 200 V

IRF630S N - CHANNEL 200V - 0.35 - 9A- D2PAKMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDIRF630S 200 V

IRF630IRF630FPN-channel 200V - 0.35 - 9A TO-220/TO-220FPMesh overlay II Power MOSFETGeneral featuresType VDSS RDS(on) IDIRF630 200V

IRF630, RF1S630SMData Sheet January 20029A, 200V, 0.400 Ohm, N-Channel Power FeaturesMOSFETs 9A, 200VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.400power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanc

IRF630B/IRFS630B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been especially tailored to Fast switchin

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.333 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

IRF630S, SiHF630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200DefinitionRDS(on) ()VGS = 10 V 0.40 Surface MountQg (Max.) (nC) 43 Available in Tape and ReelQgs (nC) 7.0 Dynamic dV/dt RatingQgd (nC) 23 Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Paralleli

IRF630, SiHF630Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.40 Fast Switching RoHS*Qg (Max.) (nC) 43COMPLIANT Ease of ParallelingQgs (nC) 7.0Qgd (nC) 23 Simple Drive RequirementsConfiguration Single Lead (Pb)-free AvailableDDESCRIPTIONTO-

IRF630S, SiHF630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200DefinitionRDS(on) ()VGS = 10 V 0.40 Surface MountQg (Max.) (nC) 43 Available in Tape and ReelQgs (nC) 7.0 Dynamic dV/dt RatingQgd (nC) 23 Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Paralleli

Spec. No. : MOS200401HI-SINCERITYIssued Date : 2004.04.01Revised Date : 2005.04.22MICROELECTRONICS CORP.Page No. : 1/6HIRF630 Series Pin AssignmentHIRF630 / HIRF630FTabN-CHANNEL POWER MOSFET3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis power MOSFET is designed for low voltage, high speed powerswitching applicati

IRF630RoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 200V Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID 9.0AGSDescriptionGTO-220(P)DAPEC MOSFET provide the power designer with the best combination of fastSswitching , lower on-resistance and reasonable cost.

RoHS IRF630 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(9A, 200Volts)DESCRIPTION The Nell IRF630 are N-channel enhancement mode silicon gate power field effect transistors.D They are designed, tested and guaranteed to withstand Dlevel of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliab

SMD Type MOSFETN-Channel MOSFETIRF630S (KRF630S) Features VDS (V) = 200V ID = 9 A (VGS = 10V) RDS(ON) 400m (VGS = 10V) Fast switching Low thermal resistancedgs Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 200V Drain-Gate Voltage VDG 200 Gate-Source Voltage VGS 20 Ta = 25 9 Cont

IRF630MFPwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.265f = 60 Hz) RoHSQg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating TemperatureQgs (nC) 5 Dynamic dV/dt RatingQgd (nC) 8 Low Thermal Resist

IRF630Swww.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200DefinitionRDS(on) ()VGS = 10 V 0.30 Surface MountQg (Max.) (nC) 43 Available in Tape and ReelQgs (nC) 7.0 Dynamic dV/dt RatingQgd (nC) 23 Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Paralleling Simpl

MOSFET INCHANGE IRF630 N-channel mosfet transistor Features 1 2 3 With TO-220 package Low on-state and thermal resistance Fast switching VDSS=200V; RDS(ON)0.4;ID=9A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVDSS Drain-source voltage (VGS=0) 200 VVGS Gate-source voltage 20 V ID Drain Current-continuous@ TC

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630B DESCRIPTION Drain Current ID= 9A@ TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.4(Max) Fast Switching Speed APPLICATIONS Desinged for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC conve

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION Drain Current ID=9A@ TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.4(Max) Fast Switching Speed Low Drive Requirement APPLICATIONS This device is n-channel, enhancement mode, power MOSFET designed espec

Isc N-Channel MOSFET Transistor IRF630NLFEATURESWith TO-262 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF630NSTRRPBFDESCRIPTIONDrain Current I =9.3A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis de

Isc N-Channel MOSFET Transistor IRF630NSFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

isc N-Channel MOSFET Transistor IRF630NIIRF630NFEATURESStatic drain-source on-resistance:RDS(on) 0.3Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T

MOSFET INCHANGE IRF630F N-channel mosfet transistor Features With TO-220F package 1 2 3 Low on-stateand thermal resistance Fast switching VDSS=200V; RDS(ON)0.4;ID=9A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVDSS Drain-source voltage (VGS=0) 200 VVGS Gate-source voltage 20 VID Drain Current-continuous@ TC