IRF7240TRPBF MOSFET: P-Ch, 40V, 10.2A. Full datasheet with pinout, specifications and replacement transistor list

IRF7240TRPBF Datasheet (PDF)

..1. Size:736K cn vbsemi
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IRF7240TRPBFwww.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD

7.1. Size:229K international rectifier
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PD- 93916IRF7240HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET-40V 0.015@VGS = -10V -10.5A Surface Mount0.025@VGS = -4.5V -8.4A Available in Tape & ReelA1 8DescriptionS DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques toachieve the extremely low on-resistance per silicon3 6

7.2. Size:121K international rectifier
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PD- 95253IRF7240PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET-40V 0.015@VGS = -10V -10.5Al Surface Mount0.025@VGS = -4.5V -8.4Al Available in Tape & Reell Lead-FreeA1 8DescriptionS DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques toachieve the extremely low on-resistan

8.1. Size:178K international rectifier
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PD- 94087IRF7241HEXFET Power MOSFET)))) Trench Technology VDSS RDS(on) max (m) ID Ultra Low On-Resistance-40V 41@VGS = -10V -6.2A P-Channel MOSFET70@VGS = -4.5V -5.0A Available in Tape & ReelA1 8S DDescription2 7New trench HEXFET Power MOSFETs from DSInternational Rectifier utilize advanced processing3 6S Dtechniques to achieve ex