All MOSFET. IRF7240TRPBF Datasheet

 

IRF7240TRPBF Datasheet and Replacement


   Type Designator: IRF7240TRPBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 10.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 64 nC
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 335 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01(typ) Ohm
   Package: SO8
 

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IRF7240TRPBF Datasheet (PDF)

 ..1. Size:736K  cn vbsemi
 irf7240trpbf.pdf pdf_icon

IRF7240TRPBF

IRF7240TRPBFwww.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD

 7.1. Size:229K  international rectifier
 irf7240.pdf pdf_icon

IRF7240TRPBF

PD- 93916IRF7240HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET-40V 0.015@VGS = -10V -10.5A Surface Mount0.025@VGS = -4.5V -8.4A Available in Tape & ReelA1 8DescriptionS DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques toachieve the extremely low on-resistance per silicon3 6

 7.2. Size:121K  international rectifier
 irf7240pbf.pdf pdf_icon

IRF7240TRPBF

PD- 95253IRF7240PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET-40V 0.015@VGS = -10V -10.5Al Surface Mount0.025@VGS = -4.5V -8.4Al Available in Tape & Reell Lead-FreeA1 8DescriptionS DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques toachieve the extremely low on-resistan

 8.1. Size:178K  international rectifier
 irf7241.pdf pdf_icon

IRF7240TRPBF

PD- 94087IRF7241HEXFET Power MOSFET)))) Trench Technology VDSS RDS(on) max (m) ID Ultra Low On-Resistance-40V 41@VGS = -10V -6.2A P-Channel MOSFET70@VGS = -4.5V -5.0A Available in Tape & ReelA1 8S DDescription2 7New trench HEXFET Power MOSFETs from DSInternational Rectifier utilize advanced processing3 6S Dtechniques to achieve ex

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Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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