All MOSFET. IRF7303TR Datasheet

 

IRF7303TR MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF7303TR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 6.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 117 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022(typ) Ohm
   Package: SO8

 IRF7303TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF7303TR Datasheet (PDF)

 ..1. Size:833K  cn vbsemi
 irf7303tr.pdf

IRF7303TR IRF7303TR

IRF7303TRwww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

 7.1. Size:578K  1
 auirf7303q.pdf

IRF7303TR IRF7303TR

AUTOMOTIVE GRADE AUIRF7303Q VDSS Features 1 8S1 D1 30V Advanced Planar Technology 2 7G1 D1RDS(on) max. Dual N Channel MOSFET 3 6S2 D20.054 Low On-Resistance 5G2 D2ID Logic Level Gate Drive 5.3A Top View Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

 7.2. Size:111K  international rectifier
 irf7303.pdf

IRF7303TR IRF7303TR

PD - 9.1239DIRF7303HEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-Resistance D1S1VDSS = 30V Dual N-Channel Mosfet 2 7G1 D1 Surface Mount3 6S2 D2 Available in Tape & Reel4 5G2 D2RDS(on) = 0.050 Dynamic dv/dt Rating Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniq

 7.3. Size:230K  infineon
 irf7303pbf.pdf

IRF7303TR IRF7303TR

PD - 95177IRF7303PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8l Dual N-Channel MosfetS1 D1VDSS = 30Vl Surface Mount 2 7G1 D1l Available in Tape & Reel3 6S2 D2l Dynamic dv/dt Rating4 5G2 D2RDS(on) = 0.050l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanc

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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