IRF7324TR MOSFET Datasheet: P-Ch, 20V, 6.7A. Full specification with pinout and replacement list

IRF7324TR Specs and Replacement

Type Designator: IRF7324TR

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 typ Ohm

Package: SO8

IRF7324TR substitution

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IRF7324TR datasheet

..1. Size:1183K cn vbsemi
irf7324tr.pdf pdf_icon

IRF7324TR www.VBsemi.tw Dual P-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.018 at VGS = - 4.5 V - 8.9 TrenchFET Power MOSFET 0.022 at VGS = - 2.5 V - 20 - 8.1 Advanced High Cell Density Process 0.030 at VGS = - 1.8 V - 3.6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS... See More ⇒

7.1. Size:164K international rectifier
irf7324pbf.pdf pdf_icon

PD - 95460 IRF7324PbF HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance 1 8 S1 D1 VDSS = -20V Dual P-Channel MOSFET 2 7 G1 D1 Low Profile (... See More ⇒

7.2. Size:185K international rectifier
irf7324pbf-1.pdf pdf_icon

IRF7324TRPbF-1 HEXFET Power MOSFET VDS -20 V 1 8 RDS(on) max S1 D1 0.018 2 7 (@V = -4.5V) GS G1 D1 Qg (typical) 42 nC 3 6 S2 D2 ID 4 5 -9.0 A G2 D2 (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free En... See More ⇒

7.3. Size:99K international rectifier
irf7324.pdf pdf_icon

PD -93799A IRF7324 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance 1 8 S1 D1 VDSS = -20V Dual P-Channel MOSFET 2 7 G1 D1 Low Profile (... See More ⇒