All MOSFET. IRF7341TRPBF Datasheet

 

IRF7341TRPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF7341TRPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 11.7 nC
   trⓘ - Rise Time: 3.3 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SO8

 IRF7341TRPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF7341TRPBF Datasheet (PDF)

 ..1. Size:952K  cn vbsemi
irf7341trpbf.pdf

IRF7341TRPBF IRF7341TRPBF

IRF7341TRPBFwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Cha

 7.1. Size:403K  1
auirf7341q.pdf

IRF7341TRPBF IRF7341TRPBF

AUTOMOTIVE GRADE AUIRF7341Q VDSS Features 1 8 55V S1 D1 Advanced Planar Technology 2 7G1 D1RDS(on) typ. 0.0433 6 Ultra Low On-Resistance S2 D24 5 max. Logic Level Gate Drive G2 D20.050 Dual N Channel MOSFET Top View ID 5.1A Surface Mount Available in Tape & Reel 175C Operating Temperature Lead-Free, RoHS Co

 7.2. Size:156K  1
irf7341q.pdf

IRF7341TRPBF IRF7341TRPBF

PD - 94391BIRF7341QTypical Applications HEXFET Power MOSFET Anti-lock Braking Systems (ABS) Electronic Fuel InjectionVDSS RDS(on) max ID Air bag 55V 0.050@VGS = 10V 5.1ABenefits Advanced Process Technology0.065@VGS = 4.5V 4.42A Dual N-Channel MOSFET Ultra Low On-Resistance 175C Operating Temperature Repetitive Avalanche Allowed up to Tjmax

 7.3. Size:199K  international rectifier
irf7341gpbf.pdf

IRF7341TRPBF IRF7341TRPBF

IRF7341GPbFHEXFET Power MOSFET Advanced Process TechnologyVDSS RDS(on) max ID Dual N-Channel MOSFET Ultra Low On-Resistance 55V 0.050@VGS = 10V 5.1A 175C Operating Temperature0.065@VGS = 4.5V 4.42A Repetitive Avalanche Allowed up to Tjmax Lead-Free Halogen-FreeDescription1 8S1 D1These HEXFET Power MOSFETs in a Dual SO-8 package2 7ut

 7.4. Size:134K  international rectifier
irf7341.pdf

IRF7341TRPBF IRF7341TRPBF

PD -91703IRF7341HEXFET Power MOSFET Generation V Technology1 8S1 D1 Ultra Low On-ResistanceVDSS = 55V2 7 Dual N-Channel MosfetG1 D1 Surface Mount3 6S2 D2 Available in Tape & Reel4 5G2 D2 Dynamic dv/dt RatingRDS(on) = 0.050 Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing technique

 7.5. Size:137K  international rectifier
irf7341q.pdf

IRF7341TRPBF IRF7341TRPBF

PD - 94391AIRF7341QTypical Applications HEXFET Power MOSFET Anti-lock Braking Systems (ABS) Electronic Fuel InjectionVDSS RDS(on) max ID Air bag 55V 0.050@VGS = 10V 5.1ABenefits Advanced Process Technology0.065@VGS = 4.5V 4.42A Dual N-Channel MOSFET Ultra Low On-Resistance 175C Operating Temperature Repetitive Avalanche Allowed up to Tjmax

 7.6. Size:138K  international rectifier
irf7341ipbf.pdf

IRF7341TRPBF IRF7341TRPBF

PD-95087IRF7341IPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8S1 D1l Dual N-Channel MosfetVDSS = 55V2 7l Surface MountG1 D1l Available in Tape & Reel3 6S2 D2l Dynamic dv/dt Rating4 5G2 D2l Fast SwitchingRDS(on) = 0.050l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanc

 7.7. Size:421K  infineon
auirf7341q.pdf

IRF7341TRPBF IRF7341TRPBF

AUTOMOTIVE GRADE AUIRF7341Q VDSS Features 1 8 55V S1 D1 Advanced Planar Technology 2 7G1 D1RDS(on) typ. 0.0433 6 Ultra Low On-Resistance S2 D24 5 max. Logic Level Gate Drive G2 D20.050 Dual N Channel MOSFET Top View ID 5.1A Surface Mount Available in Tape & Reel 175C Operating Temperature Lead-Free, RoHS Co

 7.8. Size:158K  infineon
irf7341pbf.pdf

IRF7341TRPBF IRF7341TRPBF

PD -95199IRF7341PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8l Dual N-Channel Mosfet S1 D1VDSS = 55Vl Surface Mount 2 7G1 D1l Available in Tape & Reel3 6S2 D2l Dynamic dv/dt Rating4 5G2 D2l Fast SwitchingRDS(on) = 0.050l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced

 7.9. Size:2130K  slkor
irf7341.pdf

IRF7341TRPBF IRF7341TRPBF

IRF734160V Dual N-Channel MOSFETDescriptionThis Dual N-Channel MOSFET uses advanced trench technology andSOP-8design to provide excellent R with low gate charge. D1DS(on)D1It can be used in a wide variety of applications.D2D2S1G1S2FeaturesG21) V =60V,I =5 A,R

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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