IRF8736TR MOSFET Datasheet: N-Ch, 30V, 15A. Full specification with pinout and replacement list

IRF8736TR Specs and Replacement

Type Designator: IRF8736TR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 195 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 typ Ohm

Package: SO8

IRF8736TR substitution

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IRF8736TR datasheet

..1. Size:810K cn vbsemi
irf8736tr.pdf pdf_icon

IRF8736TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch ... See More ⇒

7.1. Size:497K international rectifier
auirf8736m2tr.pdf pdf_icon

AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V(BR)DSS 40V Optimized for Automotive Motor Drive, DC-DC and RDS(on) typ. 1.3m other Heavy Load Applications max. 1.9m Exceptionally Small Footprint and Low Profile High Power Density ID (Silicon Limited) 137A Low Parasitic Paramete... See More ⇒

7.2. Size:224K international rectifier
irf8736pbf-1.pdf pdf_icon

IRF8736PbF-1 HEXFET Power MOSFET VDS 30 V A A 1 8 S D RDS(on) max 4.8 m 2 7 (@V = 10V) GS S D Qg (typical) 17 nC 3 6 S D ID 4 5 18 A G D (@T = 25 C) A SO-8 Top View Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Features Benefits Industry-standard pinout SO-8 Pack... See More ⇒

7.3. Size:497K international rectifier
auirf8736m2.pdf pdf_icon