IRF9310TRPBF-9 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRF9310TRPBF-9
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 10.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 57 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 455 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011(typ) Ohm
   Package: SO8

IRF9310TRPBF-9 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS