All MOSFET. IRFR48ZTR Datasheet

 

IRFR48ZTR MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFR48ZTR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 47 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO252

 IRFR48ZTR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFR48ZTR Datasheet (PDF)

 ..1. Size:1583K  cn vbsemi
 irfr48ztr.pdf

IRFR48ZTR IRFR48ZTR

IRFR48ZTRwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit

 0.1. Size:292K  international rectifier
 auirfr48ztr.pdf

IRFR48ZTR IRFR48ZTR

PD - 97586AUTOMOTIVE GRADEAUIRFR48ZHEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-ResistanceRDS(on) max.11m 175C Operating Temperature Fast Switching GID (Silicon Limited)62A Repetitive Avalanche Allowed up to TjmaxSID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified *Des

 7.1. Size:348K  international rectifier
 irfr48zpbf irfu48zpbf.pdf

IRFR48ZTR IRFR48ZTR

PD - 95950AIRFR48ZPbFIRFU48ZPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 11mGDescriptionID = 42ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resista

 7.2. Size:678K  infineon
 auirfr48z.pdf

IRFR48ZTR IRFR48ZTR

AUTOMOTIVE GRADE AUIRFR48Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175C Operating Temperature RDS(on) max. 11m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 62A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Descript

 7.3. Size:348K  infineon
 irfr48zpbf irfu48zpbf.pdf

IRFR48ZTR IRFR48ZTR

PD - 95950AIRFR48ZPbFIRFU48ZPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 11mGDescriptionID = 42ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resista

 7.4. Size:242K  inchange semiconductor
 irfr48z.pdf

IRFR48ZTR IRFR48ZTR

isc N-Channel MOSFET Transistor IRFR48Z, IIRFR48ZFEATURESStatic drain-source on-resistance:RDS(on)11mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-So

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SLI80R850SJ | IRFS642

 

 
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